Характеристики
| Transistor Polarity | N and P Channel |
| Continuous Drain Current Id | 6.4A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 35mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 1V |
| Power Dissipation Pd | 2.1W |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | SOIC |
| No. of Pins | 8 |
| SVHC | No SVHC (20-Jun-2011) |
| Cont Current Id P Channel | 5.4A |
| Continuous Drain Current Id, N Channel | 6.4A |
| Continuous Drain Current Id, P Channel | -5.4A |
| Current Id Max | 6.4A |
| Current Temperature | 25°C |
| Drain Source Voltage Vds, N Channel | 30V |
| Drain Source Voltage Vds, P Channel | -30V |
| Junction Temperature Tj Max | 150°C |
| Junction Temperature Tj Min | -55°C |
| Module Configuration | Dual |
| No. of Transistors | 2 |
| On Resistance Rds(on), N Channel | 0.035ohm |
| On Resistance Rds(on), P Channel | 0.048ohm |
| On State Resistance N Channel Max | 35mohm |
| On State Resistance P Channel Max | 48mohm |
| Package / Case | SOIC |
| Power Dissipation Pd | 1.25W |
| Power Dissipation Pd | 2.1W |
ZXMC3A16DN8TADiodes Inc.MOSFETs