Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 2.2A |
| Drain Source Voltage Vds | 20V |
| On Resistance Rds(on) | 120mohm |
| Rds(on) Test Voltage Vgs | 4.5V |
| Threshold Voltage Vgs Typ | 700mV |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | SOT-23 |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 2.2A |
| Current Temperature | 25°C |
| Junction Temperature Tj Max | 150°C |
| Junction Temperature Tj Min | -55°C |
| No. of Transistors | 1 |
| On State Resistance Max | 120mohm |
| Package / Case | SOT-23 |
| Power Dissipation Pd | 625mW |
| Power Dissipation Pd | 806mW |
| Power Dissipation Ptot Max | 625mW |
| Pulse Current Idm | 8A |
| SMD Marking | 7N2 |
| Termination Type | SMD |
| Voltage Vds Typ | 20V |
| Voltage Vgs Max | 12V |
| Voltage Vgs Rds on Measurement | 4.5V |
| Voltage Vgs th Min | 700mV |
ZXMN2A01FTADiodes Inc.MOSFETs