Характеристики
| Transistor Polarity | N |
| Max Current Id | 2A |
| Max Voltage Vds | 30V |
| On State Resistance | 0.12ohm |
| Rds Measurement Voltage | 10V |
| Max Voltage Vgs | 20V |
| Power Dissipation | 806mW |
| Operating Temperature Range | -55ºC to +150ºC |
| Transistor Case Style | SOT-23 |
| No. of Pins | 3 |
| Case Style | SOT-23 |
| Cont Current Id | 2A |
| Current Temperature | 25°C |
| Max Junction Temperature Tj | 150°C |
| Max On State Resistance | 0.12ohm |
| Max Power Dissipation Ptot | 625mW |
| Min Junction Temperature, Tj | -55°C |
| Min Voltage Vgs th | 1V |
| No. of Transistors | 1 |
| Power Dissipation Pd | 625mW |
| Pulse Current Idm | 8A |
| Reel Quantity | 3000 |
| SMD Marking | 7N3 |
| Tape Width | 8mm |
| Termination Type | SMD |
| Transistor Type | MOSFET |
| Typ Voltage Vds | 30V |
| Typ Voltage Vgs th | 1V |
| Voltage Vgs Rds on Measurement | 10V |
ZXMN3A01FTADiodes Inc.MOSFETs