Характеристики
| Transistor Type | Enhancement |
| Transistor Polarity | Dual N |
| Voltage, Vds Typ | 60V |
| Current, Id Cont | 5A |
| Resistance, Rds On | 0.05ohm |
| Voltage, Vgs Rds on Measurement | 10V |
| Voltage, Vgs th Typ | 1V |
| Case Style | SOIC |
| Termination Type | SMD |
| Current, Idm Pulse | 24A |
| Pin Configuration | 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1) |
| Power, Pd | 1.25W |
| Transistors, No. of | 2 |
| Voltage, Vds Max | 60V |
ZXMN6A25DN8TADiodes Inc.MOSFETs