Elpida Memory

Японский производитель DRAM, образованный в 1999 году слиянием DRAM-подразделений NEC и Hitachi. Специализировался на мобильной памяти. В 2013 году поглощён Micron Technology и переименован в Micron Memory Japan.

Страна: ЯпонияОснована: 1999

Найдено 2 135 компонентов
Партномер
Категория
Описание
EDS2532CABJ-75-E
256m bits sdram
UPD45128841G5-A75LT-9JF
MC-4R128FKE6D-653
Direct rambus dram rimm module 128m byte (64m word x 16 bit)
EDE2516ABSE-GE-E
256m bits ddr2 sdram for hyper dimm
EDJ1104BASE-8A-E
1g bits ddr3 sdram
EDE1104AASE-4A-E
1g bits ddr2 sdram organized as 33,554,432 words x 8 banks.
EDD1232ABBH
128m bits ddr sdram
EDE1116AESE-6E-E
1g bits ddr2 sdram
EBJ20RE4BAFA
2gb registered ddr3 sdram dimm
EDJ1104BDSE
1g bits ddr3 sdram
EBE21FD4AGFD-5C-E
2gb fully buffered dimm
EDS2532EEBH-75TT
256m bits sdram wtr (wide temperature range)
EBD11ED8ADFB-7B
1gb unbuffered ddr sdram dimm (128m words x72 bits, 2 ranks)
EBS51RC4ACFC
512mb registered sdram dimm
EDE2508AASE-5C-E
256m bits ddr2 sdram
EBR51UC8ABKD
512mb 32 bit direct rambus dram rimmâ„
EDE2508AASE-BE-E
256m bits ddr2 sdram for hyper dimm
EBE10RD4AEFA
1gb registered ddr2 sdram dimm (128m words x 72 bits, 1 rank)
EDE2508ABSE-6C-E
256m bits ddr2 sdram
EDE1116ABSE-5C-E
1g bits ddr2 sdram
EDE5116ABSE-4A-E
RAM
512m bits ddr2 sdram
EDE2516ABSE-5C-E
256m bits ddr2 sdram
EDE1108AESE-8E-F
1g bits ddr2 sdram
EDE5108AESK-4A-E
512m bits ddr2 sdram
EDE5108GASA-5A-E
512m bits ddr ii sdram
EDE5104ABSE-4A-E
512m bits ddr2 sdram
EDE5108GASA-4A-E
512m bits ddr ii sdram
EBE21FE8ACFT
RAM
2gb fully buffered dimm
EDE1108ACSE-5C-E
1g bits ddr2 sdram
EDE5108AJBG-1J-E
512m bits ddr2 sdram
EBD10RD4ABFA-6B
1gb registered ddr sdram dimm
EDE5108ABSE-4A-E
512m bits ddr2 sdram
EDJ1116BASE-DG-E
1g bits ddr3 sdram
EDE2104ABSE-8G-E
2g bits ddr2 sdram
EDE5108ABSE-5C-E
512m bits ddr2 sdram
EDE1104ACBG-6E-E
1g bits ddr2 sdram
EDE1104ACBG-8E-E
RAM
1g bits ddr2 sdram
EDE5108ABSE-AE-E
512m bits ddr2 sdram for hyper dimm
EDE5108ABSE-BE-E
512m bits ddr2 sdram for hyper dimm
EDJ1104BASE-DJ-E
1g bits ddr3 sdram
EDE1104ACSE-5C-E
1g bits ddr2 sdram
EDE1108ACBG-5C-E
1g bits ddr2 sdram
EDS2516APTA-TI
256m bits sdram wtr (wide temperature range)
EDS2532CASG-75-E
256m bits sdram
MC-4R128FKE6D-845
Direct rambus dram rimm module 128m byte (64m word x 16 bit)
EBD52UC8AKDA
512mb ddr sdram so dimm (64m words x 64 bits, 2 ranks)
EBD10RD4ADFA-6B
1gb registered ddr sdram dimm (128m words x72 bits, 1 rank)
PD45128841G5-A75T-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
EBD52UC8AKDA-6B
512mb ddr sdram so dimm (64m words x 64 bits, 2 ranks)
EDX5116ADSE-4D-E
512m bits xdrâ„