Elpida Memory
Японский производитель DRAM, образованный в 1999 году слиянием DRAM-подразделений NEC и Hitachi. Специализировался на мобильной памяти. В 2013 году поглощён Micron Technology и переименован в Micron Memory Japan.
Найдено 2 123 компонентов
Партномер
Категория
Описание
EDJ1104BDSE-AE-F
1g bits ddr3 sdram
EBD52UC8AARA-7A
512mb ddr sdram so dimm
EDJ1108BDSE-GL-F
1g bits ddr3 sdram
PD45128163G5-A10LT-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
EDD5116ADTA-7B-E
512m bits ddr sdram
EDD5104ADTA-7B
512m bits ddr sdram
EBR51EC8ABFD-AE
512mb direct rambusâ„
PD45128441G5-A75LI-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
MC-4R256FKE8D
Direct rambus dram rimm module 256m byte (128m word x 18 bit)
EDS2532AABH-1AR2-E
256m bits sdram
EDS2532AABH-6B
256m bits sdram (8m words x 32 bits)
EBE21EE8ABFA-8E-E
2gb unbuffered ddr2 sdram dimm
EBE51FD8AHFL
512mb fully buffered dimm
EBE51UD8AGFA-4A-E
512mb unbuffered ddr2 sdram dimm (64m words x 64 bits, 1 rank)
EDE5104AESK
512m bits ddr2 sdram
EDD5104ABTA-7B
512m bits ddr sdram
EBE11UD8AESA
RAM
1gb ddr2 sdram so dimm (128m words x 64 bits, 2 ranks)
EDX5116ABSE-3C-E
512m bits xdr dram (32m words x16 bits)
EBD51RD8ABFA-6B
512mb registered ddr sdram dimm
EDJ1104BASE-AE-E
1g bits ddr3 sdram
EDJ1116BABG-AG-E
1g bits ddr3 sdram
EBS21RC2ACNA
2gb registered sdram dimm
EBD11ED8ADFB
RAM
1gb unbuffered ddr sdram dimm (128m words x72 bits, 2 ranks)
EDJ1108BASE-8A-E
1g bits ddr3 sdram
EDE5104ABSE-5C-E
512m bits ddr2 sdram
EDS2508APSA-7A
256m bits sdram
EBE11FD8AGFD-5C-E
1gb fully buffered dimm
EBJ41HE4BAFA-DJ-E
4gb registered ddr3 sdram dimm
MC-4R256FKE8S-840
Direct rambus dram so rimm module 256m byte (128m word x 18 bit)
EBE52EC8AAFA-5C-E
512mb unbuffered ddr2 sdram dimm
EBJ82HF4B1RA
8gb registered ddr3 sdram dimm
EBE41FE4ABHD-6E-E
4gb fully buffered dimm
EBD25UC8AKFA-5C-E
256mb unbuffered ddr sdram dimm (32m words x 64 bits, 1 rank)
EDR2518ABSE-AD-E
288m bits direct rambus dram
HM5257805BTD-A6
512m lvttl interface sdram 133 mhz/100 mhz 8 mword
EBE51RD8AEFA-6
512mb registered ddr2 sdram dimm
PD45128841G5-A80I-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
HM5225165B-B6
256m lvttl interface sdram 133 mhz/100 mhz 4 mword
EDE5116AJSE
512m bits ddr2 sdram
EBE21EE8ABFA-4A-E
2gb unbuffered ddr2 sdram dimm
EDS5104ABTA-7A
512m bits sdram
EBE51ED8AGFA
RAM
512mb unbuffered ddr2 sdram dimm (64m words x 72 bits, 1 rank)
PD45128163G5-A75LI-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
DE1116AEBG-8E-F
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EBR51UC8ABKD-AE
512mb 32 bit direct rambus dram rimmâ„
EBE21UE8ACWB-8G-E
2gb unbuffered ddr2 sdram dimm
HB52F649E1
512 mb registered sdram dimm 64 mword
PD488588FF-C80-45-DH1
288m bits direct rambus dram
EDX5116ADSE-3A-E
512m bits xdrâ„
EBE21FD4AHFT
2gb fully buffered dimm