Hynix Semiconductor

Южнокорейский производитель памяти DRAM и NAND Flash, основан в 1983 году как Hyundai Electronics. В 2001 году переименован в Hynix Semiconductor, в 2012 году вошёл в группу SK под именем SK hynix. Входит в тройку крупнейших мировых производителей памяти.

Страна: Южная КореяОснована: 1983

Найдено 4 485 компонентов
Партномер
Категория
Описание
HY57V64820HGT-K
4 banks x 2m x 8bit synchronous dram
HY5PS12821F-4
Ddr2 sdram 512mb
HY5V26C(L/S)F-S(I)
Sdram 128mb
HY5V56D(L/S)F(P)-P
Sdram 256mb
HYM71V16735HCT8M
Sdram unbuffered dimm 128mb
HYM71V32635HCLT8P-K
Sdram unbuffered dimm 256mb
HYM72V64636BLT8-H
Sdram unbuffered dimm 512mb
HYMD264G726B8M
Ddr sdram registered dimm 512mb
HYMD264M646B(L)F8-K
Ddr sdram so dimm 512mb
HYMD512G726A8M-L
Ddr sdram registered dimm 1gb
HYMD264G726BF4N
Ddr sdram registered dimm 512mb
HY62SF16403ALLM
Super low power slow sram 4mb
HY62V8100BLLST-E
Low power slow sram 1mb
HYMD232G726B(L)8M-K
Ddr sdram registered dimm 256mb
HYMD264646A8J
Ddr sdram unbuffered dimm 512mb
HYMD564M646A(L)6-D43
Ddr sdram so dimm 512mb
HYMP564R72(L)8-Y6
Ddr2 sdram registered dimm 512mb
GMS87C2120
Cmos single chip 8 bit microcontroller with a/d converter & vfd driver
HY27SF161G2M-VPIP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27UF161G2M-TEP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY29F800ABR-70I
8 megabit (1mx8/512kx16), 5 volt only, flash memory
HY57V281620HCLT-SI
Wraparound high value thin film
HY57V561620BLT-8I
4banks x 4m x 16bit synchronous dram
HY57V561620BLT-KI
4banks x 4m x 16bit synchronous dram
HY57V643220C(L)T(P)-8(I)
Sdram 64mb
HY5DU12422BF-D4
Ddr sdram 512mb
HY5DU12822CTP
512mb ddr sdram
HY5DW573222F(P)-2
Gddr sdram 256mb
GM281C5032
8 bit single chip microcontrollers
GMS81608TK
Lg semicon 8 bit microcontrollers
HY29F400ABG-90I
4 megabit (512kx8/256kx16) 5 volt only flash memory
HYM71V16C735HCT8M-K
Sdram registered dimm 128mb
HYMP112S64MP8
Ddr2 sdram so dimm 1gb
HY62SF16806B-SFC
Super low power slow sram 8mb
HYMD232G726(L)8M-L
Ddr sdram registered dimm 256mb
HYMD232G726B8M-L
Ddr sdram registered dimm 256mb
HYMD264646B8
Ddr sdram unbuffered dimm 512mb
HYMD564646A(L)8-H
Ddr sdram unbuffered dimm 512mb
GM76U256C
32k x8 bit 3.0v low power cmos slow sram
GMS81516BTQ
8 bit single chip microcontrollers
HY27LF081G2M-TMS
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27LF081G2M-TPIB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27UF081G2M-TIS
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY5DU28822DLT-X
Wraparound high value thin film
HY5DU56422BT-D4/D43
Ddr sdram 256mb
HY5DU56822BT
Ddr sdram 256mb
HY5DU56822D(L)T-K
Ddr sdram 256mb
GM71C17400CLT-6
4,194,304 words x 4 bit cmos dynamic ram
HL15203
Hyundai electronics industries system ic division
HY27SF161G2M-VPMB
1gbit (128mx8bit / 64mx16bit) nand flash memory