Hynix Semiconductor
Южнокорейский производитель памяти DRAM и NAND Flash, основан в 1983 году как Hyundai Electronics. В 2001 году переименован в Hynix Semiconductor, в 2012 году вошёл в группу SK под именем SK hynix. Входит в тройку крупнейших мировых производителей памяти.
Найдено 4 485 компонентов
Партномер
Категория
Описание
HY29LV320BF-80I
32 mbit (2m x 16) low voltage flash memory
HY29LV320BF-90
32 mbit (2m x 16) low voltage flash memory
HY57V281620ETP-5
128mb synchronous dram based on 2m x 4bank x16 i/o
HY57V283220LT-8
4 banks x 1m x 32bit synchronous dram
HY57V561620T-H
4banks x 4m x 16bit synchronous dram
HY5DU28422BT-H
Ddr sdram 128mb
HY5DU56822CT-D43
Ddr sdram 256mb
HY5PS121621FP-E4
Ddr2 sdram 512mb
HY29F040AC-90I
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
GL3276A
Less changes of malfunction associated with a high frequency lighting fluorscent lamp internal trap circuit.
GM71V17403C-7
4,194,304 words x 4 bit cmos dynamic ram
HY27SF161G2M-TCS
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY29F400ABR-50
4 megabit (512kx8/256kx16) 5 volt only flash memory
HY5DU113222FMP-22
Gddr sdram 512mb
HY5DU561622CT(P)-M
Ddr sdram 256mb
HY5DV641622AT
64m(4mx16) ddr sdram
HY5V22FP-8
Sdram 128mb
HY62SF16403ASLM-I
Super low power slow sram 4mb
HY62V8400ALLG-I
Low power slow sram 4mb
HYM71V16655HCT6-P
Sdram unbuffered dimm 128mb
HYMD232646C(L)8-L
Ddr sdram unbuffered dimm 256mb
HYMD232G726AL8M-H
Wraparound high value thin film
HYMD232M646C(L)6-K
Ddr sdram so dimm 256mb
HYMD264646D8
Ddr sdram unbuffered dimm 512mb
HYMD512646AL8-K
Wraparound high value thin film
HYMD532646AL6-H
Wraparound high value thin film
HY62UF16804B-DFI
512kx16bit full cmos sram
HYM72V32756BLT8-P
Sdram unbuffered dimm 256mb
HYMD212G726CS4M
Ddr sdram registered dimm 1gb
HYMD564726A8
Ddr sdram unbuffered dimm 512mb
STAC9707T
Multimedia audio codec for ac97
HY29F080T90
8 megabit (1m x 8)/ 5 volt only/ flash memory
HY29F400ATR-90I
4 megabit (512kx8/256kx16) 5 volt only flash memory
HY29LV160TF-12
16 mbit (2m x 8/1m x 16) low voltage flash memory
HY29LV160TF-70I
16 mbit (2m x 8/1m x 16) low voltage flash memory
HY57V161610DTC-10(I)
Sdram 16mb
HY5DU561622D(L)T-L
Ddr sdram 256mb
HY5DW113222FMP-2
Gddr sdram 512mb
HY5DW283222BFP-2
Gddr sdram 128mb
HY5DW283222BFP-36
Gddr sdram 128mb
HYMD564G726B(L)F8N-D43
Ddr sdram registered dimm 512mb
HYMD212G726ALS4-H
Wraparound high value thin film
HYMD232646C8-K
Ddr sdram unbuffered dimm 256mb
HYMD512G726A(L)8M-L
Ddr sdram registered dimm 1gb
GM71CS17403C-5
4,194,304 words x 4 bit cmos dynamic ram
GMS81516BTLQ
8 bit single chip microcontrollers
HY57V281620HCST-PI
Wraparound high value thin film
HY57V561620BT-SI
Sdram 256mb
HY5DS113222FMP-4
Gddr sdram 512mb
HY5DU2842DT-J
Ddr sdram 128mb