Японская технологическая корпорация Nippon Electric Company, основана в 1899 году. Производила широкий спектр электронных компонентов и полупроводников, включая микропроцессоры и DRAM. Полупроводниковое подразделение NEC Electronics в 2010 году объединилось с Renesas Technology в компанию Renesas Electronics.
Найдено 52 705 компонентов
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Категория
Описание
UPA1716G
Switching p channel power mos fet industrial use
UPD78F0515AGA
Electronic Components
MCU, 8BIT, 78K0, 20MHZ, LQFP 48
UPC2745TB-E3-A
RF Diodes
3 v, super minimold silicon mmic wideband amplifier for mobile communications
2SJ302-Z
High speed switching p ch power mosfet 60v/16a
SMG2371P
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
UPC8112T
RF Diodes
Silicon mmic 1st frequency down converter for cellular/cordless telephone
2SA1461
High frequency amplifier and switching pnp silicon epitaxial transistor mini mold
2SC5010-T1
Npn silicon epitaxial transistor 3 pins ultra super mini mold
NSAD500H-T1-A
ESD Protection Diodes
Prevention of esd and surge for high speed interface(usb2.0, ieee1394, or 100b)
2SK4035
MOSFETs
Switching n channel power mosfet
UPC8106TB
Silicon mmic 2.0 ghz frequency up converter for cellular/cordless telephones
RD100E
Diodes
500 mw dhd zener diode do 35
UPG2009TB
Necs l/ s band 4w spdt switch
NESG2101M05-T1
Necs npn sige high frequency tran sis tor
UPC8106T
3 v/ silicon mmic frequency up converter
2SC5184
Npn epitaxial silicon transistor in super mini mold package for low noise microwave amplification
RD27EB2
500 mw dhd zener diode do 35
EE2-24NUH-L
Power Relays
Compact and lightweight, high breakdown voltage, surface mounting type
2SC1654
Display tube drive ,high voltage switching npn silicon epitaxial transistor mini mold
UPC2763TB-E3
3 v, super minimold silicon mmic medium output power amplifier for mobile communications
UPG2012TB
Necs 1/4w single control l band spdt switch
UPC2758T
Silicon mmic 1st frequency down converter for cellular/cordless telephone
NE68133
Necs npn silicon high frequency transistor
UPC2798GR-E1
If down convertor ic for digital catv
UPC311G2-E2
Single comparator
UPB1508GV-E1-A
3 ghz input divide by 2 prescaler ic for dbs tuners
2SK300
MOSFETs
Switching n channel power mos fet industrial use
NESG210719
Necs npn sige transistor for low noise, high gain amplification
2SC5194
BJTs
Microwave low noise amplifier npn silicon epitaxial transistor
2SB736
Audio frequency power amplifier pnp silicon epitaxial transistor(mini mold)
UPG152TA
L band spdt switch
2SD882L-C-TA3-T
Npn(for the output stage of 3 watts audio amplifier, voltage regulator, dc dc converter and relay driver)
NE25139
General purpose dual gate gaas mesfet
NESG2031M05-T1-A
Necs npn sige high frequency tran sis tor
2SC4180
BJTs
Audio frequency high gain amplifier npn silicon epitaxial transistor
EC21A0920401
Compact and lightweight, small mounting size, high breakdown voltage
RD27E
500 mw dhd zener diode do 35
2SC5508
Npn silicon rf transistor for low noise, high gain amplification flat lead 4 pin thin super mini mold
SMX43C106KAN360
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
SMX52A102KAN120
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
CSTCR4M91G53A-R0
Resonators
8 bit single chip microcontrollers
SMG2305
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
SMP11A
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
NESG2101M05
Necs npn sige high frequency tran sis tor
UPC393C
Low power dual comparators
UPD78F0058GK-9EU
8 bit single chip microcomputer 78k/0 series
SMG2305PE
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
2SJ598
P ch power mosfet 60v rds(on)max.=130m ohm to 251, to 252
UPG152TA-E3
L band spdt switch
NESG260234-T1-AZ
BJTs
3 pin power minimold