Японская технологическая корпорация Nippon Electric Company, основана в 1899 году. Производила широкий спектр электронных компонентов и полупроводников, включая микропроцессоры и DRAM. Полупроводниковое подразделение NEC Electronics в 2010 году объединилось с Renesas Technology в компанию Renesas Electronics.
Найдено 52 705 компонентов
Партномер
Категория
Описание
2SK2858
N channel mos field effect transistor for high speed switching
SMD0805P100TF
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
2SB736A
Audio frequency power amplifier pnp silicon epitaxial transistor(mini mold)
2SB1116A
Silicon transistor
SMD0805P010TF
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
SMF100A
TVS Diodes
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
UPA1951TE-T1-AT
Microcontrollers
Pch enhancement type mos fet
UPC8163TB
Silicon mmic 2.0 ghz frequency up converter for cellular telephone
RD6.8ES-T4
Constant voltage diode 400mw do 34
EA2-12
Compact and lightweight
PS2801C-1-F3-L-A
High isolation voltage sop photocoupler
2SC5508-T2
Npn silicon rf transistor for low noise, high gain amplification flat lead 4 pin thin super mini mold
NE32584C-T1A
C to ku band super low noise amplifier n channel hj fet
2SK2090-T1-A
N channel mos type silicon field effect transistor
2SC4570
Npn silicon epitaxial transistor super mini mold
SM5033A
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
UPC1474HA
Amplifiers - Audio
(upc1475ha) remote control preamplifier
SMH5.0A
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
UPC8108T
Mixer + oscillator ic for pager system
2SK1590
Microcontrollers
N channel mos fet
NE3210S01-T1B
RF MOSFET
X to ku band super low noise amplifer n channel hj fet
SMF11CA
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
2SK3484
MOSFETs
Switching n channel power mosfet
2SK3483-Z
Switching n channel power mosfet
SMD110PL
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
UPG2009TB-E3-A
Necs l/ s band 4w spdt switch
2SJ302
Switching p channel power mos fet industrial use
SMD1200PL
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
1SS123-T2B
Diodes
Silicon switching diode
SM22T
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
2SC2223-T1B
Silicon transistor
2SC3734-T1B
BJTs
0
UPC2763TB-E3-A
3 v, super minimold silicon mmic medium output power amplifier for mobile communications
UPD78F0058GK-9EU-A
8 bit single chip microcomputer 78k/0 series
SM10B-SRSS-TB
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
UPC8112TB
Silicon mmic 1st frequency down converter for cellular/cordless telephone
UPG2015TB-E3-A
RF Semiconductors and Devices
RF Switch SPDT 500MHz to 2.5GHz 20dB 6 Pin Super Mini Mold T/R
PS2533-1-V
High collector to emitter voltatge high isolation voltage multi photocoupler siries
RD10F
Zener diodes 1 w do 41 glass sealed package
UPC2708TB
5 v, super minimold silicon mmic medium output power amplifier
NE25139-T1
General purpose dual gate gaas mesfet
UPD78F9177AGB-8ES-A
78k/0s series 8sc
NE4210S01-T1B
X to ku band super low noise amplifier n channel hj fet
EN2997KE62016AN
Twin relay for motor and solenoid reversible control
SMUN2111T1G
Fusible alloy thermal sensitive type, 0.5 amperes 250 va.c. and 3 and 5 amperes 50 vd.c. rated current
RD15E-T1
Constant voltage diode 500mw do 35
UPC2709T
RF Semiconductors and Devices
2300 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
UPG2015TB
Necs 1w single control l, s band spdt switch
2SK1109
N channel silicon junction field effect transistor for impedance converter of ecm
2SD2230
BJTs
Npn epitaxial type silicon transistor, for low frequenc