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Polyfet RF Devices

Американский производитель мощных РЧ-транзисторов и усилительных модулей на базе GaN, LDMOS и VDMOS технологий. Продукция применяется в военной связи, радиовещании, радарах и ЯМР-оборудовании. Штаб-квартира в Камарильо, Калифорния.

Страна: СШАОснована: 1984

Найдено 869 компонентов

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Wire Terminal Connectors

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Wire Terminal Connectors

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Voltage Regulators - Switching

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

SR401A333JAATR1

Silicon gate enhancement mode rf power vdmos transistor

SR401A393JARTR1

Silicon gate enhancement mode rf power vdmos transistor

SR401C105KARAP2

Silicon gate enhancement mode rf power vdmos transistor

SR401C105MARTR2

Silicon gate enhancement mode rf power vdmos transistor