Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.

Страна: Южная КореяОснована: 1969

Найдено 7 686 компонентов
Партномер
Категория
Описание
K4S511633F-YL75000
8m x 16bit x 4 banks mobile sdram
K6X8016C3B
512kx16 bit low power full cmos static ram
K9F1208Q0A
512mb/256mb 1.8v nand flash errata
K9F1G16Q0M-PIB0
1gb gb 1.8v nand flash errata
K9F2G08Q0M
Flash memory
KA2428
Tone ringer with bridge diode
PC1004-1R0M-RC_10
Pc100 sdram module preliminary
M383L2920BTS-CAA
Ddr sdram registered module
KM681002A-20
128kx8 high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature ra…
KM736FV4021H-5
128kx36 & 256kx18 synchronous pipelined sram
KS57C0502
Microcontroller
M312L2920MT0
M312l2920mt0 ddr sdram 184pin dimm data sheet
M366S3323DTU
32mx64 sdram dimm based on 16mx8, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
M377S1723CT3 SDRAM DIMM (INTEL 1.2 VER B
16mx72 sdram dimm with pll & register based on 16mx8, 4banks 4k ref., 3.3v synchronous drams with spd serial presence…
M383L3223BT1
32m x 72 ddr sdram 184pin dimm based on 32mx8 data sheet
M464S1724ETS-C7A
64mb, 128mb unbuffered sodimm
PC1005-4R7M-RC
Pc100 sdram module preliminary
IRF141
N channel power mosfets
K4D261638E-TC2A
2m x 16bit x 4 banks double data rate synchronous dram
K4H1G3238E-TLB0
128mb ddr sdram
K4H283238B-TCA2
128mb ddr sdram
K4H641638E-TCA0
128mb ddr sdram
K4S280432E-TC75
128mb e die sdram specification
K4S560432B-TC/L1L
256mbit sdram 16m x 4bit x 4 banks synchronous dram lvttl
K4S56163LF
4m x 16bit x 4 banks mobile sdram in 54boc
K4S56323LF-FE
2m x 32bit x 4 banks mobile sdram in 90fbga
K4S643232C-TC/L55
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K6X0808T1D-YF70
32kx8 bit low power cmos static ram
KA2143B
R/g/b video amplifier with osd interface for monitors
KFG1216D2A-FIB5
Flash memory
K6F1616T6C-FF70
1m x16 bit super low power and low voltage full cmos static ram
K7B801825B-QC65
256kx36 & 512kx18 bit synchronous pipelined burst sram
M470T3354CZ0-CLE6
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc
KM41257AP-15
256k x 1 bit dynamic ram with page / nibble mode
KM418RD8AC(D)-RK70
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KM44C4103C
4m x 4bit cmos quad cas dram with fast page mode
KM48S16030AT-G/F10
128mbit sdram 4m x 8bit x 4 banks synchronous dram lvttl
KM684000LT-7
512kx8 bit high high speed cmos static ram
M312L3310CT0
M312l3310ct0 ddr sdram 184pin dimm data sheet
M366S1723FTS-C7A
Sdram unbuffered module
M368L3223ETN-AA
Ddr sdram unbuffered module
M470L6423EN0-CB3
512mb unbuffered sodimm(based on stsop)
M470L6524BTU0-CLB3
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
K4H560838E-TC/LAA
Ddr sdram 256mb e die (x4, x8)
K4R441869A-N(M)CK8
256k x 16/18 bit x 2*16 dependent banks direct rdramtm
K4S560432B-TC75T00
16m x 4bit x 4 banks synchronous dram lvttl
K4S643232C-TC60
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K4C89093AF-GCFB
288mb x18 network dram2 specification
K4C89163AF-AIFB
288mb x18 network dram2 specification
K4H1G3238E-TLA2
128mb ddr sdram