Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K6T4008U1C-VB85
512kx8 bit low power and low voltage cmos static ram
K6X0808T1D-YF85
32kx8 bit low power cmos static ram
K7R640982M-FC25000
2mx36 & 4mx18 & 8mx9 qdrtm ii b2 sram
K9F2808U0B-VIB0
16m x 8 bit nand flash memory
K9F2816U0C-YCB0
16m x 8 bit / 8m x 16 bit nand flash memory
KA2404A
Dc motor speed controller
KA9201M
Rf amp for cdp
K6F1616U6C
16mb(1m x 16 bit) low power sram
K6R1008V1D-KC10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6T0808C1D-GB55
32kx8 bit low power cmos static ram
K9F1G08Q0M-PCB0
1gb gb 1.8v nand flash errata
K9F5608D0C-Y
32m x 8 bit / 16m x 16 bit nand flash memory
MC1GU128HACA-0QC00
Multimediacard specification
MR16R0828BN1
Rambus module
KIM684000-10
524, 288 word x 8 bit high speed cmos static ram
KM6164000BLRI-10L
256kx16 bit low power cmos static ram
KM68V1000BLI
128k x 8bit low power and low voltage cmos statinc ram
KMM372V404BS
4m x 72 dram dimm with ecc using 4mx16, 4mx4 4k refresh, 3.3v
KS5514B-06
On screen display processor
KSR2006
Pnp (switching application)
KSR2213
Pnp (switching application)
M372F160(8)0DJ(T)0-C EDO MODE
16m x 72 dram dimm with ecc using 16m x 4, 4k & 8k refresh, 3.3v data sheet
M381L3313CT1
32mx72 ddr sdram 184pin dimm based on 16mx8 data sheet
K4D261638I-LC50000
128mbit gddr sdram
K4E170812D
2m x 8bit cmos dynamic ram with extended data out
K4H1G0438M
1gb m die ddr sdram specification
K4H510838A-TLA0
128mb ddr sdram
K4H510838B-TLA2
128mb ddr sdram
K4H561638D-TC/LB0
256mb
K4M563233D
8mx32 mobile sdram 90fbga
K4S640832E-TL1H
64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl
K4S64163LH-F75
1m x 16bit x 4 banks mobile sdram in 54fbga
K4S64323LH-HE1L
512k x 32bit x 4 banks mobile sdram in 90fbga
K4T51043QC-ZCLD5
512mb c die ddr2 sdram
KA386BD
The ka386b/bd/bs is a power amplifier designed for use in low voltage consumer applications
K6F4016U6G
256kx16 bit super low power and low voltage full cmos static ram
K6R4016C1D-EL0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K7A203600A
64k x 36 bit synchronous pipelined burst sram rev. 2.0 (dec. 1999)
K7A803600B-PC16000
256kx36 & 512kx18 synchronous sram
K8D1716UBB-YI07
16m dual bank nor flash memory
K9F2808U0B-V
16m x 8 bit nand flash memory
K9F2816U0C-HCB0
16m x 8 bit nand flash memory
K9F5616U0B-HCB0
32m x 8 bit / 16m x 16 bit nand flash memory
KA8304
Video
KC75118C
1/5 inch ccd image sensor for ntsc camera
DS_S1M8837
Fractional n rf/integer n if dual pll
K4H560838F-TC/LB3
256mb f die ddr sdram specification
K4H560838F-UC/LB0
256mb f die ddr sdram specification
K4H563238B-TLA2
128mb ddr sdram
K4H640438E-TLA0
128mb ddr sdram