Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4S561632E-UL60
256mb e die sdram specification 54 tsop ii with pb free (rohs compliant)
K4S64323LH-HL1L
512k x 32bit x 4 banks mobile sdram in 90fbga
KIM684000
524/ 288 word x 8 bit high speed cmos static ram
KM62256DLP-5
32kx8 bit low power cmos static ram
KM684000BLT-5L
512kx8 bit low power cmos static ram
KM684000LI-7
524,288k word x 8 bit high speed cmos static ram
KS84C32-25CL
Dynamic ram controllers
KS88C01104
8 bit single chip cmos microcontrollers
M366F080(8)3DJ3-C EDO MODE WITHOUT BUFFE
8m x 64 dram dimm using 8mx8, 8k & 4k refresh, 3.3v data sheet
M464S3254ETS-C7A
Sdram unbuffered sodimm
M470T2953BS3-CD5/CC
200pin unbuffered sodimm based on 512mb b die 64bit non ecc
MC12U128NACA
Multimediacard specification
MC12U032HACA-0QC00
Multimediacard specification
STD131 ASIC
Book contents
K1S161611A
1mx16 bit uni transistor random access memory
K4H1G3238B-TLA0
128mb ddr sdram
K4H510838B-TC/LA2
512mb b die ddr sdram specification
K4H513238M-TCA0
128mb ddr sdram
K4S560432A-TC75T00
16m x 4bit x 4 banks synchronous dram lvttl
K4S641632C-TC/L80
1m x 16bit x 4 banks synchronous dram
K4S64163LH-F1H
1m x 16bit x 4 banks mobile sdram in 54fbga
K4S643232C-TC55
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K4S64323LH-FF1H
512k x 32bit x 4 banks mobile sdram in 90fbga
K4S64323LH-FF75
512k x 32bit x 4 banks mobile sdram in 90fbga
K4T51083QC-ZLCC
512mb c die ddr2 sdram
K6R1008C1C-T10
128kx8 bit high speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges.
K6R1016V1D-JC08
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K7A401800M
256k x 18 bit synchronous pipelined burst sram rev. 2.0 (dec. 1999)
K7A803609B-PI25000
256kx36 & 512kx18 bit synchronous pipelined burst sram
K9K4G08Q0M
512m x 8 bit / 256m x 16 bit nand flash memory
KC74125B
1/4 inch ccd image sensor for eia camera
KIM684000L-10L
524, 288 word x 8 bit high speed cmos static ram
KMM366S1623CTY-GL
Pc100 sdram module
KSR1212
Npn (switching application)
M470L3324BTU0-CLA2
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
K7N163631B-PC16000
512kx36 & 1mx18 pipelined ntram
K6F8016R6D-F
512k x16 bit super low power and low voltage full cmos static ram
K6T0808C1D-RL55
32kx8 bit low power cmos static ram
K6T4008U1C-TB70
512kx8 bit low power and low voltage cmos static ram
K7B163625A K7B163225A K7B161825A
512kx36/x32 & 1mx18 bit synchronous burst sram data sheet
K7Q161862B-FC16000
512kx36 & 1mx18 qdrtm b2 sram
K9F1216D0A-Y
64m x 8 bit , 32m x 16 bit nand flash memory
KBE00S003M-D411
1gb nand*2 + 256mb mobile sdram*2
K4D623238B-GC/L45
64mbit ddr sdram
K4F641612C-TC
4m x 16bit cmos dynamic ram with fast page mode
K4F661612B-TC
4m x 16bit cmos dynamic ram with fast page mode
K4H280438M-TLB0
128mb ddr sdram
K4H510438D-TLA0
128mb ddr sdram
K4H511638B-ZC/LA2
512mb b die ddr sdram specification
K4H560838M-TCB0
128mb ddr sdram