Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4S560832D-TC1L
8m x 8bit x 4 banks synchronous dram data sheet
K4T1G084QM-ZCCC
1gb m die ddr2 sdram specification
KFH4G16Q2M-DED6
Flash memory(54mhz)
KM23C4100DT
4m bit (512kx8 /256kx16) cmos mask rom
KM4132G271BQ(R)-8
128k x 32bit x 2 banks synchronous graphic ram lvttl
KM416C4000B
4m x 16bit cmos dynamic ram with fast page mode
KM6161002AI-15
Cmos sram
KM62256CLTG-7L
32kx8 bit low power cmos static ram
KS88C4716
8 bit single chip cmos microcontrollers
M381L3313BT1
32mx72 ddr sdram 184pin dimm based on 16mx8 data sheet
M390S2858DT1-C7A
128mx72 sdram dimm with pll & register based on stacked 128mx4, 4banks 8k ref., 3.3v sdrams with spd
M470L6524BTU0-CB0
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
M470L6524CU0-LA2
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
PC1004-330K-RC
Pc100 sdram module preliminary
K6R1008C1C-L15
128kx8 bit high speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges.
K6R4016C1D-JL10
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T4016V3C-RB85
256kx16 bit low power and low voltage cmos static ram
K6X0808C1D-RF70
32kx8 bit low power cmos static ram
K6X4016C3F
256kx16 bit low power full cmos static ram
K7A163601M K7A161801M
512k x 36 & 1m x 18 bit synchronous pipelined burst sram data sheet
K7A803609B-QC25
256kx36 & 512kx18 bit synchronous pipelined burst sram
K7N163601-QI16
512kx36 & 1mx18 pipelined ntram
K9K1216Q0C
64m x 8 bit / 32m x 16 bit nand flash memory
K9XXG08UXM-E
256m x 8 bit / 128m x 16 bit nand flash memory
KA2271
Dolby b type noise reduction processor
KFG1216U2A-DIB5
Flash memory
K6X0808C1D-TF55
32kx8 bit low power cmos static ram
K6T1008C2E-GL70
128kx8 bit low power cmos static ram
K6X1008T2D-PB70
128kx8 bit low power cmos static ram
K6X4008T1F-GB85
512kx8 bit low power and low voltage cmos static ram
K6X8008C2B-B
1mx8 bit low power and low voltage cmos static ram
K7M803625B-QC65
256kx36 & 512kx18 bit pipelined ntramtm
K7N161831B-QC16
512kx36 & 1mx18 pipelined ntram
K7N803645BQC16000$FAB
256kx36 & 512kx18 bit pipelined ntramtm
K9F5608U0C-YCB0
512mb/256mb 1.8v nand flash errata
K9F6408Q0C-B
8m x 8 bit bit nand flash memory
KFG1216D2M-DID
Flash memory
KFG1216U2A-DEB5
Flash memory
KM684000BLP-7
512kx8 bit low power cmos static ram
KM68U1000BLRI-10L
128k x 8bit low power and low voltage cmos statinc ram
M366S1623DT0-C1H
16m x 64 sdram dimm based on 8m x 8, 4banks, 4k refresh, 3.3v synchronous drams with spd serial presence detect
C9658
Microcontroller
K4H1G0438M-LB0
1gb m die ddr sdram specification
K4H280438F-ULB0
128mb f die ddr sdram specification
K4H510438B-TCA0
128mb ddr sdram
K4H511638D-TLA0
128mb ddr sdram
K4H513238B-TCB0
128mb ddr sdram
K4S281632M-L1H
128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl
K4S510832B-TC75
512mb b die sdram specification
M470T6554CZ3-CLD5
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc