Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
MR16R162GEG0-CT9
Key timing parameters
PC1005-180M-RC
Pc100 sdram module preliminary
KS88C4708
8 bit single chip cmos microcontrollers
M390S2858BT1 SDRAM DIMM
128mx72 sdram dimm with pll & register based on stacked 128mx4, 4banks 8k ref., 3.3v sdrams with spd data sheet
K6R1016C1D-UI10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6X1008T2D-GQ70
128kx8 bit low power cmos static ram
K7I163682B-FC25
512kx36 bit, 1mx18 bit ddrii cio b2 sram
K8D1716UTC-TC09
16m dual bank nor flash memory
K9K8G08U1M
512m x 8 bits / 1g x 8 bits nand flash memory
K4H560438D-TC/LA2
256mb
K4H560438D-TCA0
128mb ddr sdram
K4H640438C-TCA2
128mb ddr sdram
K4H643238E-TLA0
128mb ddr sdram
K4S281632M-TL1L
128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl
K4S510832B-CL75
512mb b die sdram specification
K4S643233F-SE/I
2mx32 mobile sdram 90fbga cmos sdram
K5A3340YBC-T855
Multi chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram
MMBA811C5
Pnp (driver transistor)
M485L1624FT0
Ddr sdram sodimm
DS_S1T2410B02
Bipolar integrated circuit designed as telephone bell replacement
K4F641612C-TL50
4m x 16bit cmos dynamic ram with fast page mode
K4H281638D-TLA2
128mb ddr sdram
K4H511638D-UC3
512mb c die ddr sdram specification
K4M28163LF-RE
2m x 16bit x 4 banks mobile sdram in 54fbga
K4S280832B-TCL10
4m x 8bit x 4 banks sychronous dram
K4S511632B-TC75
512mb b die sdram specification
KMM594000A-7
4m x 9 cmos simm memory module
K6R4004C1D
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6X0808T1D
32kx8 bit low power cmos static ram
K7A803600A-16
256kx36bit synchronous burst sram data sheet
K7B403625B-QC
128kx36/x32 & 256kx18 synchronous sram
K7B803625M
256k x 36 & 512k x 18 bit synchronous pipelined burst sram data sheet
K7P803611M-HC25000
256kx36 & 512kx18 synchronous pipelined sram data sheet
K8D1716UBC-DI07
16m dual bank nor flash memory
KFG2G16D2M-DID5
Flash memory(54mhz)
K4S640432F-TC75
4m x 4bit x 4 banks synchronous dram data sheet
K4H560838E-VCB3
Ddr sdram 256mb e die (x4, x8)
K4S281632B-TL80
128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl
K4S281632M-TC1H
128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl
K4S640432E-L1H
4m x 4bit x 4 banks synchronous dram data sheet
K4S641632C-TC/L1L
1m x 16bit x 4 banks synchronous dram
K4T51083QC
512mb c die ddr2 sdram
K6R1016V1D-JI10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6X0808T1D-YB85
32kx8 bit low power cmos static ram
K9F1208U0C-J
64m x 8 bit nand flash memory
K9F5608Q0B-DIB0
32m x 8 bit / 16m x 16 bit nand flash memory
K9F5608Q0B-HCB0
32m x 8 bit / 16m x 16 bit nand flash memory
MC56U512HACA-0QC00
Multimediacard specification
MR16R1628EG0-CM8
Key timing parameters
KFH2G16U2M-DIB5
Flash memory(54mhz)