Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
KMM372V1600BK
16m x 72 dram dimm with ecc using 16mx4, 4k 8k refresh, 3.3v
KS57C0301
Single chip cmos microcontroller
KS57C5304
Single chip cmos microcontrollers
M366S1723DTS-C
Pc133/pc100 unbuffered dimm
M372F080(8)3DJ(T)0-C EDO MODE
8m x 72 dram dimm with ecc using 8m x 8, 4k & 8k refresh, 3.3v data sheet
M374F080(8)3DJ3-C EDO MODE
8m x 72 dram dimm with ecc using 8m x 8, 8k & 4k refresh, 3.3v data sheet
M464S3254DTS-L1H/C1H
32mx64 sdram sodimm based on 16mx16, 4banks, 8k refresh,3.3v synchronous drams with spd
M470L3324CU0-CB3
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
KFG2G16Q2M-DID6
Flash memory(54mhz)
KFH2G16D2M-DID6
Flash memory(54mhz)
KM416RD16AD
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KM416RD8AS-SCM80
128mbit rdram 256k x 16 bit x 2*16 dependent banks direct rdramtm for consumer package
KM416S8030T-G/F10
2m x 16bit x 4 banks synchronous dram
KM681000BLTI-10
128k x8 bit low power cmos static ram
KS57C0404
Single chip cmos microcontroller
KS88C6216
8 bit single chip cmos microcontrollers
KSR1210
Npn (switching application)
M383L3313BT1
32m x 72 ddr sdram 184pin dimm based on 16mx8 serial presence detect
K6F2008V2E-LF70
256kx8 bit super low power and low voltage full cmos static ram
K6R1004V1D-JC(I)10
64kx16 bit high speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.
K7I163682B-FC30
512kx36 bit, 1mx18 bit ddrii cio b2 sram
K7N323601M
1mx36 & 2mx18 bit pipelined ntram
K7N401801M
128kx36 & 256kx18 bit pipelined ntram™ data sheet
K7R323684M-FC16
1mx36 & 2mx18 qdrtm ii b4 sram
K9F5608Q0C-HCB0
512mb/256mb 1.8v nand flash errata
K9F5608U0M-
32m x 8 bit nand flash memory
KA2133
1 chip deflection system
KFG1G16U2M-DID6
Flash memory(54mhz)
K4H1G0838D-TCA0
128mb ddr sdram
K4H511638D-TCA0
128mb ddr sdram
K4H560438D-TCA2
128mb ddr sdram
K4H561638M-TLA2
128mb ddr sdram
K4R271669B-NCK8
Direct rdram™ data sheet
K4S280832M-TC/L10
128mbit sdram 4m x 8bit x 4 banks synchronous dram lvttl
K4S641632C-TC/L70
1m x 16bit x 4 banks synchronous dram
K4S643232E-TI60
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
MC28U032NACA
Multimediacard specification
PC1000220-24
Pc100 sdram module preliminary
MC28U512HACA
Multimediacard specification
MR16R162GEG0-CK8
Key timing parameters
TL7232
Full layer iso/iec 11172 3 audio decoder
K6R1008V1B-I12
128kx8 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temper…
K6R4008C1D-KI10T00
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T4016U3C-TB70
256kx16 bit low power and low voltage cmos static ram
K6X0808T1D-NB85
32kx8 bit low power cmos static ram
K7B803625B K7B803225B K7B801825B
256kx36 & 256kx32 & 512kx18 bit synchronous burst sram data sheet
K8D1716UBC-FC07
16m dual bank nor flash memory
K9F2808U0M-YIB0
16m x 8 bit nand flash memory
KFG2G16D2M-DIB5
Flash memory(54mhz)
KM6264BLP-12
8kx8 bit low power cmos static ram