Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
M466F0804DT1-L EDO MODE
8m x 64 dram sodimm using 4m x 16, 4k refresh, 3.3v, low power/self refresh data sheet
KM416V4100C
4m x 16bit cmos dynamic ram with fast page mode
KM6264BLG-12L
8kx8 bit low power cmos static ram
KMM372F1680BK
16m x 72 dram dimm with ecc using 16mx4, 4k 8k refresh, 3.3v
KMM372V213CK
2m x 72 dram dimm with ecc using 2mx8, 2k refresh, 3.3v
M393T2950BZ3-CD5/CC
Ddr2 registered sdram module 240pin registered module based on 512mb b die 72 bit ecc
CL21C220GBANNNC
Multilayer ceramic capacitor
K4D551638F-TC
256mbit gddr sdram
K4H560438E-ULA2
128mb ddr sdram
K4S560432B
16m x 4bit x 4 banks synchronous dram lvttl
K4S560832E-NC75
256mb e die sdram specification 54pin stsop ii
STD150 ASIC
Characteristics(jan. 22, 2002)
K6R4016V1C-TC12000
1mx4 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T4008U1C-B
512kx8 bit low power and low voltage cmos static ram
K7A803600M
256kx36 & 512kx18 bit synchronous pipelined burst sram data sheet
K9K2G16Q0M-P
256m x 8 bit / 128m x 16 bit nand flash memory
KA2225
Dual preamplifier for 3v using
KA22293
Audio signal processor
M312L2923BG0-B0
Ddr sdram registered module
KM416S8030BN-G/FH
2m x 16bit x 4 banks synchronous dram lvttl
KM681002CLI-12
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
M383L2920MT1
M383l2920mt1 ddr sdram 184pin dimm data sheet
K6R1016V1D
128k x 8 bit high speed cmos static ram(3.3v operating) data sheet
K6R4016C1C-C
256kx16 bit high speed static ram(5v operating).
K6T1008C2E-GF70000
128kx8 bit low power cmos static ram
K6T4008C1C-GB55T00
512kx8 bit low power cmos static ram
K7N163645M
512kx36 & 1mx18 bit pipelined ntramtm
K7N403601B_06
128kx36 & 256kx18 pipelined ntram
K7R163682B-FC25000
512kx36 & 1mx18 & 2mx9 qdrtm ii b2 sram
K1S32161CC-FI70
2mx16 bit page mode uni transistor random access memory
K4H280438C-TCB0
128mb ddr sdram
K4H283238M-TCA0
128mb ddr sdram
K4H510438B-TC/LB3
512mb b die ddr sdram specification
K4J52324QC-BJ14
512mbit gddr3 sdram
K4N26323AE-GC25
128mbit gddr2 sdram
K4S64163LH-RE
1m x 16bit x 4 banks mobile sdram in 54fbga
MC2DU128NACA-0QC00
Multimediacard specification
MC3361D
Low power narrowband fm if
MC56U032NACA
Multimediacard specification
K6R4016C1D-EI8
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6R4016C1D-EP8
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T4016U3C-F
256kx16 bit low power and low voltage cmos static ram
K6T4016U3C-RB70
256kx16 bit low power and low voltage cmos static ram
K6X1008T2D
128kx8 bit low power cmos static ram
K7J161882B-FI25T00
512kx36 & 1mx18 ddr ii sio b2 sram
K7N161845A-Q(F)C(I)16
512kx36 & 1mx18 pipelined ntram
K7R323684M-FC20000
1mx36 & 2mx18 qdrtm ii b4 sram
K8D1716UTC-DC07
16m dual bank nor flash memory
K9F2808U0C-PCB0
16m x 8 bit nand flash memory
K9F5608U0M-YCB0
32m x 8 bit nand flash memory