Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.

Страна: Южная КореяОснована: 1969

Найдено 7 686 компонентов
Партномер
Категория
Описание
K4S281633D
2m x 16bit x 4 banks sdram in 54csp data sheet
K4S283234F-M
1m x 32bit x 4 banks sdram in 90fbga data sheet
K4S511633F-YPC
8m x 16bit x 4 banks mobile sdram
K4S64323LH-HN75
512k x 32bit x 4 banks mobile sdram in 90fbga
PC1008
Pc100 sdram module preliminary
MC1GU016HACA
Multimediacard specification
MMBT3903
Npn (general purpose transistor)
PC1004-3R8M-RC
Pc100 sdram module preliminary
K6F2016U4E-F
128k x16 bit super low power and low voltage full cmos static ram
K6R4008V1D-KI08
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T4008U1C-TF85
512kx8 bit low power and low voltage cmos static ram
K6T4016V3C-RF10
256kx16 bit low power and low voltage cmos static ram
K7A403200M-16
128k x 32 bit synchronous pipelined burst sram rev. 5.0 (dec. 1999)
K7A801800B-QC14
256kx36 & 512kx18 bit synchronous pipelined burst sram
K7M803625B-QC65/75
256kx36 & 512kx18 bit flow through ntram
K9F8008W0M-
1m x 8 bit nand flash memory
K9K1208Q0C
64m x 8 bit / 32m x 16 bit nand flash memory
KA222211
Dual low noise eq amp
KFH2G16Q2M-DIB6
Flash memory(54mhz)
KM432S2030CT-G7
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
KM684000LT-L
512kx8 bit high high speed cmos static ram
M463S1724DN1
16mx64 sdram msodimm based on 8mx16,4banks,4k refresh,3.3v synch. drams with spd data sheet
M464S0924DTS-C7C
8mx64 sdram sodimm based on 8mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
M464S0924DTS-L1H
8mx64 sdram sodimm based on 8mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
M470L3324CU0-CCC
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
K4H643238A-TLB0
128mb ddr sdram
K4S511632D-UL75000
Ddp 512mbit sdram 8m x 16bit x 4 banks synchronous dram lvttl
K4S643232F-TL50
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
KM62256DLP-7L
Memory Cards
32kx8 bit low power cmos static ram
KFH4G16D2M-DEB6
Flash memory(54mhz)
KMM366S1623BTL-G0
S
M368L3223ETN
Ddr sdram unbuffered module
M378T3253FG0-CE6
Ddr2 unbuffered sdram module
K6F2016V4E
128k x16 bit super low power and low voltage full cmos static ram
K6R4004C1C-E12
1mx4 bit high speed static ram(5v operating).
K6T4016V3C
256kx16 bit low power and low voltage cmos static ram
K7A203200B
64kx36/x32 synchronous sram
K7B321825M-QC65
1mx36 & 2mx18 synchronous sram
K7N163601-FI16
512kx36 & 1mx18 pipelined ntram
K7N323645M-QC20
1mx36 & 2mx18 bit pipelined ntram
STD80
0.5 micron std80 standard cell library introduction
DS_K6F1016U4C
64k x16 bit super low power and low voltage full cmos static ram
IRF9132
P channel power mosfets
K4H560438E-NCB3
128mb ddr sdram
K4M511633E-F1L
8m x 16bit x 4 banks mobile sdram in 54fbga
K4S511632B-TCL75
512mb b die sdram specification
K4S56163PF-RG/F75
4m x 16bit x 4 banks mobile sdram in 54fbga
K4S640432H-L75
64mb h die sdram specification
K4S643232C-TC/L80
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K4S643232C-TC70
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl