Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K6R3024V1D-HC09
128k x 24 bit high speed cmos static ram(3.3v operating)
K6T4008U1C-VB10
512kx8 bit low power and low voltage cmos static ram
K7B801825M
256k x 36 & 512k x 18 bit synchronous pipelined burst sram data sheet
K7D801871B-HC35
256kx36 & 512kx18 sram
K7I163682B-FC20
512kx36 bit, 1mx18 bit ddrii cio b2 sram
K9F1208U0
64m x 8 bit nand flash memory
K9F5616Q0B-DCB0
32m x 8 bit / 16m x 16 bit nand flash memory
KA22241C
Dual eq amp with alc
KA2284B
5 dot led level meter driver
KA22900
Am/fm tuner + mpx
KA2295
Am/fm tuner + mpx
KFH2G16D2M-DID5
Flash memory(54mhz)
KMM366S1623CTY-GH
Pc100 sdram module
M368L6523CUS
Ddr sdram unbuffered module
M378T3354BG(Z)3-CD5/CC
240pin unbuffered module based on 512mb b die 64/72 bit non ecc/ecc
M383L2828BT1
Ddr sdram 184pin dimm 128mx72 ddr sdram data sheet
M485L1624FU0-CB3
Ddr sdram sodimm
MR16R0824BN1-CK8
Rambus module
K6F1616U6M
1m x 16 bit super low power and low voltage full cmos static ram
K6F4008U2G-F
512k x 8 bit super low power and low voltage full cmos static ram
K6R1008V1B-I8
128kx8 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temper…
K6R4016C1D-TP10
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T0808C1D-B
32kx8 bit low power cmos static ram
K7A403209B-QC
128kx36/x32 & 256kx18 synchronous sram
K7A803600A-15
256kx36bit synchronous burst sram data sheet
K7M801825B
256kx36 & 512kx18 bit flow through ntram
K7N323601M K7N321801M
1mx36 & 2mx18 bit pipelined ntram™ data sheet
K8D1716UB
16m dual bank nor flash memory
CM-1429
P.c.b circuit diagram
K1S3216B1C-I
2mx16 bit uni transistor random access memory
K4H510438C-UCB0
512mb c die ddr sdram specification
K4H511638B-TCA2
128mb ddr sdram
K4H560838E-ULB3
Ddr sdram 256mb e die (x4, x8)
K4H561638F-TCC4
256mb f die ddr400 sdram specification
K4H640438E-TLA2
128mb ddr sdram
K4M511533E-L
Mobile sdram
K4S561633F-XE
4m x 16bit x 4 banks mobile sdram in 54boc
K4S643232E-
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl(3.3v)
KM41C4000D
4m x 1bit cmos dynamic ram with fast page mode
KS88C6224
8 bit single chip cmos microcontrollers
KM44V4000C
4m x 4bit cmos dynamic ram with fast page mode
KM68257C-20
32kx8 bit high speed static ram(5v operating(, evolutionary pin out. operated at commercial temperature range.
KMM372F1600BK
16m x 72 dram dimm with ecc using 16mx4, 4k 8k refresh, 3.3v
KS88C4632
8 bit single chip cmos microcontrollers
M377S6450BT3 SDRAM DIMM (INTEL 1.2 VER B
64mx72 sdram dimm with pll & register based on 64mx4, 4banks, 8k ref., 3.3v synchronous drams with spd data sheet
M383L3223ETS
Ddr sdram registered module
M470T2953CZ0-CC
Ddr2 unbuffered sodimm
K6F8016V3A-F
512k x16 bit super low power and low voltage full cmos static ram
K6R4004C1D-JC
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6X0808T1D-NF85
32kx8 bit low power cmos static ram