Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
M470L6524CU0-CB0
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
MC1DU128NACA-0QC00
Multimediacard specification
PC1005-101K-RC
Pc100 sdram module preliminary
DS_S5D0127X01
Multistandard video decoder/scaler
K4D261638F-TC50
128mbit gddr sdram
K4H510438C-UCA2
512mb c die ddr sdram specification
K4H563238D-TLA2
128mb ddr sdram
K4H640438C-TLB0
128mb ddr sdram
K4H641638C-TLA0
128mb ddr sdram
K6R4016V1
1mx4 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6X4008T1F-MF55
512kx8 bit low power and low voltage cmos static ram
K7A203200A-10
64k x 32 bit synchronous pipelined burst sram data sheet
K7A321800M-QC20
1mx36 & 2mx18 synchronous sram
K7N803645B K7N801845B
256kx36 & 512kx18 bit pipelined ntram™ data sheet
K7P803611M-H21
256kx36 & 512kx18 synchronous pipelined sram data sheet
K8D1716UBB-YI09
16m dual bank nor flash memory
K9F1208X0A
64m x 8 bit , 32m x 16 bit nand flash memory
K9F1G08U0M-YIB0
1gb gb 1.8v nand flash errata
K9S1208V0M/A-SSB0
64mb & 128mb smartmediatm card
KA2917
Linear integrated circuit
KFG1216U2A-FIB6
Flash memory
K6R4016C1C-I15
256kx16 bit high speed static ram(5v operating).
K6T4016U3C-RF70
256kx16 bit low power and low voltage cmos static ram
K7N161801A-Q(F)C(I)25
512kx36 & 1mx18 pipelined ntram
MR16R0826BN1-CK8
Rambus module
MR18R16228DF0
Key timing parameters
KM736V989
512kx36 & 1mx18 synchronous sram
KMM366S1623BTL-GO
S
LTM150XH-T01
Samsung tft lcd
M312L2828ET0
Ddr sdram registered module
M366S3323CT0-C1L
32mb x 64 sdram dimm based on 16mb x 8, 4banks, 4kb refresh, 3.3v synchronous drams with spd serial presence detect
M377S3253AT3 SDRAM DIMM (INTEL 1.2 VER B
32mbx72 sdram dimm with pll & register based on 32mbx8, 4banks 8kb ref., 3.3v synchronous drams with spd data sheet
M464S3354BTS-C7A
Sdram unbuffered sodimm
K4H1G0838M-TC/LB3
1gb m die ddr sdram specification
K4H510838B-TLB0
128mb ddr sdram
K4H560438J-LC/LB0
128mb ddr sdram
K4H560838M-TCA2
128mb ddr sdram
K4S560432E-TC
256mb e die sdram specification
K4S640832C-TC/L70
64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl
K4S643232E-TL55
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K6X4008C1F-VQ55
512kx8 bit low power full cmos static ram
K6R1004V1D-KC08/10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6R1008C1A-I15
128kx8 high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperature ra…
K6X0808T1D-YB70
32kx8 bit low power cmos static ram
K7A203200B-QCI14
64kx36/x32 synchronous sram
K7R323684M-FC25
1mx36 & 2mx18 qdrtm ii b4 sram
K9F1G16Q0M-PCB0
1gb gb 1.8v nand flash errata
K9F3208W0A
4m x 8bit nand flash memory data sheet
KAB04D100M-TLGP
Multi chip package memory
IRFP351
N channel power mosfets