Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4S280832B-TL1H
4m x 8bit x 4 banks sychronous dram
K4S640832E-TC1L
64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl
KFH1G16Q2M-DED5
Flash memory(54mhz)
KM6161002BI-12
Cmos sram
KM62256CLP-5
32kx8 bit low power cmos static ram
KM681002BT-10
128kx8 bit high speed static ram(5v operating), revolutionary pin out. operated at commercial and industrial temperat…
KM68257CLJ-20
32kx8 bit high speed static ram(5v operating(, evolutionary pin out. operated at commercial temperature range.
KM68257CTG-12
32kx8 bit high speed static ram(5v operating(, evolutionary pin out. operated at commercial temperature range.
KS0717
55 com / 100 seg driver & controller for stn lcd
KS86C6404
8 bit single chip cmos microcontrollers
M381L2923MT1
128mx72 ddr sdram 184pin dimm based on 64mx8 data sheet
M470L6524CU0-LB0
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
M470T3354CZ3-CCC
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc
CL10B224KO8NNND
Multilayer ceramic capacitor
K1S32161CC
2mx16 bit page mode uni transistor random access memory
K4D261638F-TC33
128mbit gddr sdram
K4F160811D
2m x 8bit cmos dynamic ram with fast page mode
K4H1G3238M-TCA0
128mb ddr sdram
K4H511638B-UC/LB0
512mb b die ddr sdram specification
K4H560438E-UCA2
128mb ddr sdram
K4H643238C-TLA0
128mb ddr sdram
K4R271669A-N(M)CK8
256k x 16/18 bit x 2*16 dependent banks direct rdramtm
K4S511632C-KC/L75
Ddp 512mbit sdram
K9F5608U0C-HCB0
512mb/256mb 1.8v nand flash errata
K9K2G16U0M-YIB0
256m x 8 bit / 128m x 16 bit nand flash memory
KM62256CLTGE-10L
32kx8 bit low power cmos static ram
KM681002CLI-10
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
KM68257CLP-12
32kx8 bit high speed static ram(5v operating(, evolutionary pin out. operated at commercial temperature range.
KS57C01502
Single chip cmos microcontroller
M378T3354BG3-CD5
240pin unbuffered module based on 512mb b die 64/72 bit non ecc/ecc
M390S2858DT1
128mx72 sdram dimm with pll & register based on stacked 128mx4, 4banks 8k ref., 3.3v sdrams with spd data sheet
M470L6524CU0-CB300
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
KM416S8030T-G/F8
2m x 16bit x 4 banks synchronous dram
KM681000B
128k x8 bit low power cmos static ram
KM684000BLG-5L
512kx8 bit low power cmos static ram
LTM150XI-A01
Sansung tft lcd
M377S6450DT3
M377s6450dt3 sdram dimm (intel 1.2 ver base) data sheet
M391T6453FG0-CC
Ddr2 unbuffered sdram module
M470L1624FT0-CB3
Ddr sdram sodimm
K3P6V1000B-GC, K3P6V1000B-TC(E)
32m bit (4mx8/2mx16) cmos mask rom data sheet
K4H280838M-TLB0
128mb ddr sdram
K4H640438M-TCA0
128mb ddr sdram
K4S51323P
4m x 32bit x 4 banks mobile sdram
K4S560432D-TC7C
16m x 4bit x 4 banks synchronous dram lvttl
K4S560832D-TC/L1H
256mbit sdram 8m x 8bit x 4 banks synchronous dram lvttl
K4S641632D-TC/L75
64mbit sdram 1m x 16bit x 4 banks synchronous dram lvttl
K4S641632D-TC80000
1m x 16bit x 4 banks synchronous dram lvttl
K4S64323LH-FE75
512k x 32bit x 4 banks mobile sdram in 90fbga
MC2DU128HACA
Multimediacard specification
MC56U064NACA
Multimediacard specification