Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.

Страна: Южная КореяОснована: 1969

Найдено 7 686 компонентов
Партномер
Категория
Описание
KM428C256-6
256k x 8 bit cmos video ram
KM48L16031BT
128mb ddr sdram
KS57P4104
Single chip cmos microcontroller
M312L6420ETS
Ddr sdram registered module
M366S1654CTS-L1L
16mx64 sdram dimm based on 16mx16, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M390S2858DTU-C7A
Pc133/pc100 low profile registered dimm
M391T6553BG0-CC
Ddr2 unbuffered sdram module
M464S1724DTS-L1L
16mx64 sdram sodimm based on 8mx16,4banks,4k refresh,3.3v synchronous drams with spd
M470T2953BXX
200pin unbuffered sodimm based on 512mb b die 64bit non ecc
K6R1016V1D-KI10
RAM
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6E0808C1E
32k x 8 bit high speed cmos static ram
K8D1716UBB-TI09
16m dual bank nor flash memory
KA2265
Vco non adjusting fm stereo multiplex decoder
KFG1G16D2M-DID
Flash memory
KFG1G16U2M-DIB
Flash memory
KFG4G16U2M-DED6
Flash memory(54mhz)
KFG5616Q1A-PEB5
Onenand256
KMM366S1623AT
16m x 64 sdram dimm
KSR1112
Npn switching application)
M381L5623MTM-CA2
Ddr sdram unbuffered module
M464S3254AT1-L1H00
32mb x 64 sdram sodimm based on 16mb x 16, 4banks, 8kb refresh, 3.3v synchronous drams with spd data sheet
MC12U512HACA
Multimediacard specification
K4D261638F-TC40
128mbit gddr sdram
K4H281638B-TCB0000
256mb ddr sdram
K4H511638B-TCB0
128mb ddr sdram
K3P5V(U)1000D-D(G)C
16m bit (2mx8 /1mx16) cmos mask rom data sheet
K3P7VU1000B-YC
64m bit (8mx8 /4mx16) cmos mask rom
K4H1G0838D-TCA2
128mb ddr sdram
K4H283238M-TCB0
128mb ddr sdram
K4H510438B-TCA2
128mb ddr sdram
K4H511638C-TCB0
128mb ddr sdram
K4S643232E-TN50
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl(3.3v)
KM68V1000BLTE-7L
128k x 8bit low power and low voltage cmos statinc ram
KMM372V803BK
8m x 72 dram dimm with ecc using 8mx8, 4k 8k refresh, 3.3v
KSR1106-MTF(SAM)
Npn (switching application)
K6R4008C1C-C10
512k x 8bit high speed static cmos sram
K6X8008C2B-TQ55
1mx8 bit low power and low voltage cmos static ram
K7N801801M
256kx36 & 512kx18 pipelined ntram™ data sheet
KFG1216Q2A-FID6
Flash memory
KFG1216U2M-DED
Flash memory
MPSH20
Npn (vhf transistor)
M312L2920BG0-A2
Ddr sdram registered module
KFH1216Q2M-DID
Flash memory
KM681002CL-20
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
KM68512AL-L
64kx8 bit low power cmos static ram
KS2206B
2.3w dual audio power amp
KS57P0408
Single chip cmos microcontroller
M366S1654CTS-C1L
16mx64 sdram dimm based on 16mx16, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M368L5623MTN
Ddr sdram unbuffered module
M383L2923BTS-A2
Ddr sdram registered module