Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
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Категория
Описание
K6X1008T2D-PF55
128kx8 bit low power cmos static ram
K6X8008C2B-TF55
1mx8 bit low power and low voltage cmos static ram
K7A403600B_06
128kx36/x32 & 256kx18 synchronous sram
K7N801801B-QI13000
256kx36 & 512kx18 bit pipelined ntram
K9F2808U0C-VIB0
16m x 8 bit / 8m x 16 bit nand flash memory
TB9228
8 bit cmos microcontrollers users manual
K4H513238M-TLA0
128mb ddr sdram
K4T51083QC-ZCLD6
512mb c die ddr2 sdram
K4S51323PF-MF75
4m x 32bit x 4 banks mobile sdram
K4D553235F-GC
256m gddr sdram
K4H280838F-TC/LA2
128mb f die ddr sdram specification
K4H511638D-TLB0
128mb ddr sdram
K4H560438C-TLB0
128mb ddr sdram
K4H560438D-TCB3
256mb
K4R881869E-GCM8000
288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm
K4R881869E-GCM8T00
288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm
K4S511533F-F75
8m x 16bit x 4 banks mobile sdram in 54fbga
K4S560832E-NL75
256mb e die sdram specification 54pin stsop ii
K4T51043QB-GCD5
512mb b die ddr2 sdram
K6X4008T1F-GF85
512kx8 bit low power and low voltage cmos static ram
K7A203200B-QC(I)14
64kx36 & 64kx32 bit synchronous pipelined burst sram
K9F2808U0C-VCB0
16m x 8 bit / 8m x 16 bit nand flash memory
KA2425B
Speech network with dialer interface
KA8602BD
Low voltage audio amplifier
KFG1G16Q2M-DIB6
Flash memory(54mhz)
KM48S16030BT-G/F8
128mbit sdram 4m x 8bit x 4 banks synchronous dram lvttl
KM6264BLP-7L
8kx8 bit low power cmos static ram
KM681002CT-12
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
KM68257CL-20
32kx8 bit high speed static ram(5v operating(, evolutionary pin out. operated at commercial temperature range.
KM684000CLTI-5L
512kx8 bit low power cmos static ram
M390S6450CTU
64mx72 sdram dimm with pll & register based on 64mx4, 4banks, 8k ref., 3.3v synchronous drams with spd. low profile r…
MC1DU032HACA
Multimediacard specification
MC1DU256NACA-0QC00
Multimediacard specification
MC56U256HACA-0QC00
Multimediacard specification
STD800BLK
0.5 micron std80 standard cell library introduction
MC56U064HACA-0QC00
Multimediacard specification
K6F4016V6D FAMILY
256k x 16bit super low power and low voltage full cmos static ram data sheet
K6R4004C1D-JC0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6T1008C2E-GF70T00
128kx8 bit low power cmos static ram
K7A803609B / K7A801809B
256kx36 & 256kx32 & 512kx18 bit synchronous pipelined burst sram data sheet
K7N163631B-QC16
512kx36 & 1mx18 pipelined ntram
K8D1716UBC-PI08
16m dual bank nor flash memory
K9K2G08Q0M-PIB0
256m x 8 bit / 128m x 16 bit nand flash memory
KA2658N
Linear integrated circuit
KDA0316D
D/a converter
K4E661612C-TC45
4m x 16bit cmos dynamic ram with extended data out
K4S510432B-TC
512mb b die sdram specification
K4S511633C-YL/N1L
32mx16 mobile sdram 54csp 1/cs
K4S560432D-TL1L
16m x 4bit x 4 banks synchronous dram lvttl
KFG2G16Q2M-DID5
Flash memory(54mhz)