Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
KS9246
Atapi automated cd rom controller with embedded dram
M366F040(8)4DT1-C EDO MODE WITHOUT BUFFE
4mb x 64 dram dimm using 4mb x 16, 4kb & 8kb refresh 3.3v data sheet
M366S3323ETS-C7A
Sdram unbuffered module
M312L2923BG0-CB3
Ddr sdram registered module
KFH2G16Q2M-DEB5
Flash memory(54mhz)
KM681002B-8
128kx8 bit high speed static ram(5v operating), revolutionary pin out. operated at commercial and industrial temperat…
KS5514B-13
On screen display processor
KS88C6116
Microcontrollers
KSD5003
Npn (color tv horzontal output applications (damper diode built in)
KSR1008
Npn (switching application)
M383L6423ETS
Ddr sdram registered module
M464S0824ETS
8mx64 sdram sodimm based on 4mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
K6R1008V1D-JI08
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6T0808C1D-GF70000
32kx8 bit low power cmos static ram
K7A803600A
256kx36bit synchronous burst sram data sheet
K7N163601-FC13
512kx36 & 1mx18 pipelined ntram
K7N321801M-FC25
1mx36 & 2mx18 bit pipelined ntram
K7R161884B
512kx36 & 1mx18 qdr ii b4 sram
K9F5616U0C-D
512mb/256mb 1.8v nand flash errata
KFG2G16Q2M-DED5
Flash memory(54mhz)
MR16R1624EG0-CK8
Key timing parameters
MR18R162C(G)MN0
(16mx16)*12(16)pcs rimm™ module based on 256mb m die, 32s banks,16k/32ms ref, 2.5v data sheet
K1S32161CC-I
2mx16 bit page mode uni transistor random access memory
K4D551638D-TC33
256mbit gddr sdram
K4H510838C-TCA0
128mb ddr sdram
K4H511638G-LC/LCC
512mb c die ddr sdram specification
K4H560438D-TC/LB3
256mb
K4H560838E-ZC/LB3
Ddr sdram 256mb e die (x4, x8)
K4H563238B-TLA0
128mb ddr sdram
K4H563238E-TCA2
128mb ddr sdram
K4S161622D-TI/E80
1m x 16 sdram
K4S560432A
16m x 4bit x 4 banks synchronous dram lvttl
K4S641632H-L60
64mb h die sdram specification
K4S64323LH-HL60
512k x 32bit x 4 banks mobile sdram in 90fbga
K4C89083AF-ACF6
288mb x18 network dram2 specification
K4C89163AF-GIF6
288mb x18 network dram2 specification
K4D263238E-GC36
1m x 32bit x 4 banks graphic double data rate synchronous dram with bi directional data strobe and dll
K4H1G0838A-TCA2
128mb ddr sdram
K4H1G0838E-TLA2
128mb ddr sdram
K4H510838B-TC/LB3
512mb b die ddr sdram specification
K4H511638A-TLA0
128mb ddr sdram
K4H643238D-TCA0
128mb ddr sdram
K4H643238M-TLA2
128mb ddr sdram
K4S28323LF-HN75000
1m x 32bit x 4 banks mobile sdram in 90fbga
K4S513233F-L
Mobile sdram
K4S643232E-TI70
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K6F8008S2M FAMILY
1m x 8 bit super low power and low voltage full cmos static ram data sheet
K6R1016C1
64kx16 bit high speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.
K6R1016C1D-TC10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6R1016V1D-JECI08/10
128k x 8 bit high speed cmos static ram(3.3v operating) data sheet