Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K5A3240YTC-T755
Multi chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram
K5A3380YBC-T755
Mcp memory
MC28U512HACA-0QC00
Multimediacard specification
K6F2008U2E FAMILY
256kx8 bit super low power and low voltage full cmos static ram data sheet
K6T4016U3C-RB85
256kx16 bit low power and low voltage cmos static ram
K6X8008C2B-TF70
1mx8 bit low power and low voltage cmos static ram
K7M161825A-QC(I)65/75
512kx36 & 1mx18 pipelined ntram
K7M161825A-QC(I)75
512kx36 & 1mx18 pipelined ntram
K7N403601B K7N403201B K7N401801B
128kx36 & 128kx32 & 256kx18 bit pipelined ntram™ data sheet
K9F1216U0A-Y
64m x 8 bit , 32m x 16 bit nand flash memory
K9F5616Q0B-HCB0
32m x 8 bit / 16m x 16 bit nand flash memory
K6R1008V1B-B-P
128kx8 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temper…
K6R4016C1D-TI0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6X4008T1F-VQ85
512kx8 bit low power and low voltage cmos static ram
K6X4016C3F-TQ55
256kx16 bit low power full cmos static ram
K9F1G08U0M-PCB0
1gb gb 1.8v nand flash errata
K9F5616U0C-PIB0
512mb/256mb 1.8v nand flash errata
KFG1G16D2M-DED6
Flash memory(54mhz)
K4D263238A-GC50
1m x 32bit x 4 banks double data rate synchronous dram with bi directional data strobe and dll
K4H640838A-TLA2
128mb ddr sdram
K4H643238M-TLB0
128mb ddr sdram
K4S640832C-TC/L1L
64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl
KFG2G16U2M-DEB5
Flash memory(54mhz)
KFH1G16D2M-DIB5
Flash memory(54mhz)
KFM1216Q2M-DEB
Flash memory
KM681002BTI-10
128kx8 bit high speed static ram(5v operating), revolutionary pin out. operated at commercial and industrial temperat…
KSC2003
Npn audio frequency amplifier)
KSR2207
Pnp (switching application)
M470T3354BG3-CD5/CC
200pin unbuffered sodimm based on 512mb b die 64bit non ecc
MR16R1628EG0-CK8
Key timing parameters
M470T6554BZ0-LD5/CC
200pin unbuffered sodimm based on 512mb b die 64bit non ecc
K4H1G0438D-TCA2
128mb ddr sdram
K4H280438F-TC/LA0
128mb f die ddr sdram specification
K4H280438F-TC/LA2
128mb f die ddr sdram specification
K4H561638D-GLB3
Ddr 256mb
K4S280832A
4m x 8bit x 4 banks synchronous dram lvttl
K6R1016V1C-I15
64kx16 bit high speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.
K6T4008C1B-B
512kx8 bit low power cmos static ram
K6X1008T2D-GB55
128kx8 bit low power cmos static ram
K7M163625A-QC(I)65
512kx36 & 1mx18 pipelined ntram
K8D1716UTC-PI08
16m dual bank nor flash memory
K9F5608U0D-F
32m x 8 bit nand flash memory
KFW2G16U2M-DEB6
Flash memory(54mhz)
KFW4G16U2M-DED6
Flash memory(54mhz)
KM68512ALG-7
64kx8 bit low power cmos static ram
KSR2209
Pnp (switching application)
M347S6453CTS-C7C
M374s6453cts pc133/pc100 unbuffered sdram dimm
M366S3253CTS
32mx64 sdram dimm based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd datasheet
M374S6453BT0
64m x 72 sdram dimm with ecc based on 32m x 8, 4banks, 8k refresh, 3.3v synchronous drams with spd serial presence de…
M464S3254DTS
32mx64 sdram sodimm based on 16mx16, 4banks, 8k refresh,3.3v synchronous drams with spd