Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4M513233E-F75
4m x 32bit x 4 banks mobile sdram in 90fbga
K4S280432E
128mb e die sdram specification
K4S643232H-TL55
64mb h die (x32) sdram specification
K4T56083QF-GCE6
256mb f die ddr2 sdram
K5A3340YBC-T755
Multi chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram
KM416C1204C-L5
1m x 16bit cmos dynamic ram with extended data out
KM44C4005C
4m x 4bit cmos quad cas dram with extended data out
KM681002BJI-12
128kx8 bit high speed static ram(5v operating), revolutionary pin out. operated at commercial and industrial temperat…
KM681002CLT-20
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
LTM170EU-L01
Color active matrix tft liquid crystal display
M366S3253CTS-C1L
32mx64 sdram dimm based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd datasheet
M391T3253FG0-CE6
Ddr2 unbuffered sdram module
STDM110 ASIC
Pll 2013x
MC2DU512NACA
Multimediacard specification
PC1004-180M-RC
Pc100 sdram module preliminary
KM416V1204C-6
1m x 16bit cmos dynamic ram with extended data out
KM684000CLGI-5
512kx8 bit low power cmos static ram
KS82C54
Programmable interval timer
KS88P8324
8 bit single chip cmos microcontrollers
KSR1108
Npn (switching application)
M464S1724CT1-L1L/C1L
16mx64 sdram sodimm based on 8mx16,4banks,4k refresh,3.3v synchronous drams with spd data sheet
K6R4016C1D-EC0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6X4016T3F-Q
256kx16 bit low power and low voltage cmos static ram
K7N401809B
128kx36 & 256kx18 pipelined ntramtm
K7N803601B-QC13
256kx36 & 512kx18 bit pipelined ntram
K7P403622M-H16
128kx36 & 256kx18 synchronous pipelined sram
K9F2808Q0C-DCB0
16m x 8 bit / 8m x 16 bit nand flash memory
K9F5608D0C
32m x 8 bit / 16m x 16 bit nand flash memory
K9F5616U0B-DCB0
32m x 8 bit / 16m x 16 bit nand flash memory
K9F5616U0C-PCB0
512mb/256mb 1.8v nand flash errata
K9K2G08U1A
128m x 8 bit / 256m x 8 bit nand flash memory
KA3361BD
Telephone
KA8507BD
Compander
KFG1216Q2A-DIB6
Flash memory
K4D263238M-QC45
1m x 32bit x 4 banks double data rate synchronous ram with bi directional data strobe and dll
K4F640412D
16m x 4bit cmos dynamic ram with fast page mode
K4H510838B-TLA0
128mb ddr sdram
K4H560438E-VCB3
128mb ddr sdram
K4H560838B-TLA0
128mb ddr sdram
K4H641638M-TCA2
128mb ddr sdram
K4S280832B-TL75
4m x 8bit x 4 banks sychronous dram
K4S640432H-TC
64mb h die sdram specification
K4S643232C-TL80
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K4S643232H-TC/L50
64mb h die (x32) sdram specification
K5A3X40YTC
Multi chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram
DS_K6F8016U6C
512k x16 bit super low power and low voltage full cmos static ram
K4D553238F-GC
256mbit gddr sdram
K4H1G0838M-TC/LA2
1gb m die ddr sdram specification
K4H560838D-NC/LA0
256mb stsopii
K4H640438M-TLA0
128mb ddr sdram