Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
KS0063B
40ch segment/common driver for dot matrix lcd
KMM372C803CS
8m x 72 dram dimm with ecc using 8mx8, 4k 8k refresh, 5v
KM41257AJ-10
256k x 1 bit dynamic ram with page / nibble mode
M464S0924DTS
8mx64 sdram sodimm based on 8mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
KM418RD4AC
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KM6161002AI
Cmos sram
K9F5616U0C-YCB0
512mb/256mb 1.8v nand flash errata
K6F2008S2E FAMILY
256kx8 bit super low power and low voltage full cmos static ram data sheet
K7B801825B-PC75000
256kx36 & 512kx18 bit synchronous burst sram
K7N161845A-Q(F)C(I)25
512kx36 & 1mx18 pipelined ntram
K7N163645A-Q(F)C(I)25
512kx36 & 1mx18 pipelined ntram
KB2516
Triple 8 bit analog to digital converter
KA22103
19w dual power amp
K4H1G3238E-TCA2
128mb ddr sdram
K4H281638M-TCA2
128mb ddr sdram
K4H510438C-ZLB3
512mb c die ddr sdram specification
K4H511638B-TLB0
128mb ddr sdram
K4S640432F-TL1L
4m x 4bit x 4 banks synchronous dram data sheet
K4G323222A-PC50000
512k x 32bit x 2 banks synchronous graphic ram data sheet
K4S511632D-KC/L1L
Ddp 512mbit sdram 8m x 16bit x 4 banks synchronous dram lvttl
K4S510432B-TC75
512mb b die sdram specification
K4H561638D-TC/LA2
256mb
K4H561638F-TC/LAA
256mb f die ddr sdram specification
K4H561638F-UC/LB0
256mb f die ddr sdram specification
K4D261638F-TC36
128mbit gddr sdram
K4H280438F-UCA0
128mb f die ddr sdram specification
K4S561632B
4m x 16bit x 4 banks synchronous dram lvttl
K4F170412D
4m x 4bit cmos dynamic ram with fast page mode
K4S280832C-TC/L1L
128mbit sdram 4m x 8bit x 4 banks synchronous dram lvttl
K4R881869M-NCK7
288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm
K4M281633F
2m x 16bit x 4 banks mobile sdram in 54fbga
K4M511633E-F1H
8m x 16bit x 4 banks mobile sdram in 54fbga
KA567D
Telephone
K6T4008C1B-DL55
512kx8 bit low power cmos static ram
K6T1008C2E-TF70T00
128kx8 bit low power cmos static ram
K6R4016C1D-KC0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6F4016V6C FAMILY
256k x 16bit super low power and low voltage full cmos static ram data sheet
KA2138N
Deflection processor for cry display
K8D1716UTC-FC09
16m dual bank nor flash memory
M470L3324BTU0-CA2
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
KSR1008TA(SAM)
Npn (switching application)
M312L6423ETS
Ddr sdram registered module
KM68257CLJ-15
32kx8 bit high speed static ram(5v operating(, evolutionary pin out. operated at commercial temperature range.
KM416C4004C
4m x 16bit cmos dynamic ram with extended data out
KS7314
Digital zoom
KM68512ALG-7L
64kx8 bit low power cmos static ram
LTN121X1-L01
Data sheet
M464S6454EN0
Sdram unbuffered sodimm
M312L2828CT0
M312l2828ct0 ddr sdram 184pin dimm 128mx72 ddr sdram data sheet
KM684000BLRI-7L
512kx8 bit low power cmos static ram