Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
KM418RD8D
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KFH1G16Q2M-DIB5
Flash memory(54mhz)
M390S2858CT1
128mx72 sdram dimm with pll & register based on stacked 128mx4, 4banks 8k ref., 3.3v sdrams with spd data sheet
KSK161
N channel junction fet (fm tuner vhf amplifier)
M470L2923BNV0-CB3
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
KFW2G16D2M-DIB6
Flash memory(54mhz)
M366S1724CT0-C1H
16m x 64 sdram dimm based on 8m x 16, 4banks, 4k refresh, 3.3v synchronous drams with spd serial presence detect
KM681002CI-12
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
K6X4016T3F-TB85
256kx16 bit low power and low voltage cmos static ram
K6X1008T2D-BB85
128kx8 bit low power cmos static ram
KA22711B
Dolby b tybe nr processor
K6T4008C1B-MF70
512kx8 bit low power cmos static ram
K6R4016C1D-KL8
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6R4008C1D-UI0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
KA2201
1.2w audio power amp
KFG1216Q2A-DED6
Flash memory
K9F2808U0B-Y
16m x 8 bit nand flash memory
K8D1716UTB-YC07
16m dual bank nor flash memory
K6R1004V1D-JC08/10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K9S5608V0A
32m x 8bit smartmedia
K9F1208U0M-YIB0
64m x 8 bit nand flash memory
K7A323601M K7A321801M
1mx36 & 2mx18 bit synchronous pipelined burst sram data sheet
K6X0808C1D
32kx8 bit low power cmos static ram
K9F3208W0A-TIB0
4m x 8 bit nand flash memory
K6R1016V1D-KI10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6R1008C1C-C12
128kx8 bit high speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges.
KM432S2030CT-F10
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
KS8620N
1 chip codec for digital answering phone
KM418RD16AD
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KM75C104A-25
Cmos fifo with programmable flag
KSR1014
Npn (switching application)
KM681002BT-12
128kx8 bit high speed static ram(5v operating), revolutionary pin out. operated at commercial and industrial temperat…
M464S1724BT1 SDRAM SODIMM
16mx64 sdram sodimm based on 8mx16,4banks,4k refresh,3.3v synchronous drams with spd serial presence detect
K4H511638B-TCA0
128mb ddr sdram
K4S640432F-TC1H
4m x 4bit x 4 banks synchronous dram data sheet
K4S640432F
4m x 4bit x 4 banks synchronous dram data sheet
K4S56163LF-G
4m x 16bit x 4 banks mobile sdram in 54boc
K4E661612C-T45
4m x 16bit cmos dynamic ram with extended data out
K4S161622H
16mb h die sdram specification
K4D26323AA-GL
1m x 32bit x 4 banks double data rate synchronous ram with bi directional data strobe and dll data sheet
K5A3240YBC-T855
Multi chip package memory 32m bit (4mx8/2mx16) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram
K4T51043QC-ZCE6
512mb c die ddr2 sdram
K4H1G1638M-TCA2
128mb ddr sdram
K4H1G1638B-TCA2
128mb ddr sdram
K4S643232E-TP70
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
IRFP133
N channel power mosfets
K4S640432D-TC/L80
64mbit sdram 4m x 4bit x 4 banks synchronous dram lvttl
K4H1G0438A-TCB0
128mb ddr sdram
K4S513233F-F1L
Mobile sdram
K4H560838E-TC/LB3
Ddr sdram 256mb e die (x4, x8)