Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
DS_K1S161611A
1mx16 bit uni transistor random access memory
K4H561638E-TCA0
128mb ddr sdram
K4H561638C-TLB0
128mb ddr sdram
K4H560438E-NC/LB0
128mb ddr sdram
K4H560438E-GLB3
128mb ddr sdram
K9F6408U0C-Q
8m x 8 bit bit nand flash memory
K6X4008T1F-GQ85
512kx8 bit low power and low voltage cmos static ram
K6T4008V1C-YB85
512kx8 bit low power and low voltage cmos static ram
K6R4008V1D-JC
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K6R1004V1D-KI08
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6R1008C1D-J(T)C(I)10
64kx16 bit high speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.
K6R1008C1C-L12
128kx8 bit high speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges.
KS0084
Cmos digital intergrated circuit
KM681002CL-15
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
M366S3253DT
64mx72 sdram dimm with ecc based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M393T5750BY0-CD5/CC
Ddr2 registered sdram module 240pin registered module based on 512mb b die 72 bit ecc
K4D553235F-GC25
256m gddr sdram
K4H640838A-TLB0
128mb ddr sdram
K4S64323LH-HN1L
512k x 32bit x 4 banks mobile sdram in 90fbga
K4E661612C-60
4m x 16bit cmos dynamic ram with extended data out
K4H561638A-TLB0
128mb ddr sdram
K4S511632D-KC/L75
Ddp 512mbit sdram 8m x 16bit x 4 banks synchronous dram lvttl
K4S560432E-UC75
256mb e die sdram specification 54 tsop ii with pb free (rohs compliant)
KMM372C410CS
4m x 72 dram dimm with ecc using 4mx4, 4k 2k refresh, 5v
M366S1654CTS
16mx64 sdram dimm based on 16mx16, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
KS88C01004
8 bit single chip cmos microcontrollers
KM48S8030
2m x 8bit x 4 banks synchronous dram
KM48C2100B
2m x 8bit cmos dynamic ram with fast page mode
KM416RD16D
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KM41256AJ-10
256k x 1 bit dynamic ram with page / nibble mode
M470T6554CZ3-CLE6
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc
K6X4016C3F-B
256kx16 bit low power full cmos static ram
K7A401809B-QC
128kx36/x32 & 256kx18 synchronous sram
K6T2008V(U)2M FAMILY
256k x 8 bit low power and low voltage cmos static ram data sheet
K9F5608U0B-PCB0
32m x 8 bit / 16m x 16 bit nand flash memory
K7N803649B-QC25
256kx36 & 512kx18 bit pipelined ntramtm
K6R4008V1D-JC10T00
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K7Q161882A
512kx36 & 1mx18 qdr b2 sram
K7R323682C-FC20
1mx36 & 2mx18 & 4mx9 qdrtm ii b2 sram
MC3361N
Low power narrowband fm if
M470T3354CZ3
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc
KMM372C803CK
8m x 72 dram dimm with ecc using 8mx8, 4k 8k refresh, 5v
KM93C46
Cmos eeprom
KM68V1000BLT-10
128k x 8bit low power and low voltage cmos statinc ram
KM68V1000BLGE-10
128k x 8bit low power and low voltage cmos statinc ram
KM68512ALT-5L
64kx8 bit low power cmos static ram
KS0794
160 com / 160 seg driver for stn lcd
M366S2953MTS
128mx64 sdram dimm based on 64mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M470L3324BTU0-CLB3
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
KM62256CLG-5L
32kx8 bit low power cmos static ram