Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
M366S6453CTU
64mx64 sdram dimm based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M470L3324CU0-LCC
RAM
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
KMM372V1600BS
16m x 72 dram dimm with ecc using 16mx4, 4k 8k refresh, 3.3v
M470L3324BT0-CLB0
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
KFM2G16Q2M-DED5
Muxonenand flash memory
K4H640438D-TCB0
128mb ddr sdram
K4H1G0438M-TCA0
128mb ddr sdram
K4H510438A-TCA2
128mb ddr sdram
K4H563238A-TLB0
128mb ddr sdram
K4S643233H-L
Mobile sdram
IRFP453
N channel power mosfets
K4S283233F-G
1m x 32bit x 4 banks mobile sdram in 90fbga
K4H513238M-TCB0
128mb ddr sdram
K4H510838B-UC/LCC
512mb b die ddr sdram specification
MMBC1009F1
Am/fm rf amplifier transistor
PC1006-602K-RC
Pc100 sdram module preliminary
K9S6408V0A
8m x 8bit smartmedia™ card data sheet
KFG1G16Q2M-DED6
Flash memory(54mhz)
K6X8008T2B
Cmos sram
K7R641884M-EC25000
2mx36 & 4mx18 qdrtm ii b4 sram
K6R4008V1D-JC
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K9F6408U0C-Q
8m x 8 bit bit nand flash memory
K6R1008C1D-J(T)C(I)10
64kx16 bit high speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.
K6R1008C1C-L12
RAM
128kx8 bit high speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges.
K6R1004V1D-KI08
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K4H640438C-TCB0
128mb ddr sdram
DS_K1S161611A
1mx16 bit uni transistor random access memory
K4H560438E-NC/LB0
128mb ddr sdram
K4H560438E-GLB3
128mb ddr sdram
KM681002CL-15
RAM
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
M366S3253DT
RAM
64mx72 sdram dimm with ecc based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M393T5750BY0-CD5/CC
Ddr2 registered sdram module 240pin registered module based on 512mb b die 72 bit ecc
KS0084
Cmos digital intergrated circuit
MC12U016HACA-0QC00
Multimediacard specification
K4D553235F-GC25
256m gddr sdram
K4H640838A-TLB0
128mb ddr sdram
K4S560432E-UC75
256mb e die sdram specification 54 tsop ii with pb free (rohs compliant)
K4S511632D-KC/L75
Ddp 512mbit sdram 8m x 16bit x 4 banks synchronous dram lvttl
K4E661612C-60
RAM
4m x 16bit cmos dynamic ram with extended data out
M470T6554CZ3-CLE6
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc
K6R4008V1D-JC10T00
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K7N803649B-QC25
256kx36 & 512kx18 bit pipelined ntramtm
K7A401809B-QC
RAM
128kx36/x32 & 256kx18 synchronous sram
K7Q161882A
512kx36 & 1mx18 qdr b2 sram
K6T2008V(U)2M FAMILY
256k x 8 bit low power and low voltage cmos static ram data sheet
K9F5608U0B-PCB0
32m x 8 bit / 16m x 16 bit nand flash memory
K6X4016C3F-B
256kx16 bit low power full cmos static ram
KMM372C410CS
4m x 72 dram dimm with ecc using 4mx4, 4k 2k refresh, 5v
KM416RD16D
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
KM48C2100B
2m x 8bit cmos dynamic ram with fast page mode