Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4S640432D-TC/L80
64mbit sdram 4m x 4bit x 4 banks synchronous dram lvttl
K4H560838E-TC/LB3
Ddr sdram 256mb e die (x4, x8)
K4H1G0438A-TCB0
128mb ddr sdram
K4D623238B-GC/L55
64mbit ddr sdram
K4S643232E-TP70
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
KFG1G16U2M-DED
Flash memory
K7A203200A-15
64k x 32 bit synchronous pipelined burst sram data sheet
K7A321800M-QC14
1mx36 & 2mx18 synchronous sram
K7D803671B
256kx36 & 512kx18 sram
K7D803671B-HC25000
256kx36 & 512kx18 sram
KM48S8030D
64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl
KM48S16030AT-G/FH
128mbit sdram 4m x 8bit x 4 banks synchronous dram lvttl
KM44S32030
8m x 4bit x 4 banks synchronous dram
KFH4G16D2M-DID5
Flash memory(54mhz)
KM416V1004A-6
1m x 16 bit cmos dynamic ram with extended data out
KS84C31-XXX
Dynamic ram controllers
KS88P01416
8 bit single chip cmos microcontrollers
KIM684000L-8L
524, 288 word x 8 bit high speed cmos static ram
MMBC1623L5
Npn (amplifier transistor)
MMBT4125LT1
Pnp (general purpose transistor)
STD8010AWB
0.5 micron std80 standard cell library introduction
KFG1G16D2M-DEB5
Flash memory(54mhz)
K6R4008C1D-JI0810
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K7A203600B
64kx36/x32 synchronous sram
K6R4004V1D-JI08
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6R4004C1C-E20
1mx4 bit high speed static ram(5v operating).
K7M163625M / K7M161825M
512kx36 & 1mx18 flow through ntram™ data sheet
K7N161831B
512kx36 & 1mx18 pipelined ntram
K7R321884M-FC16
1mx36 & 2mx18 qdrtm ii b4 sram
K4T51043QC-ZCCC
512mb c die ddr2 sdram
K3P6C1000B-GC, K3P6C1000B-TC
32m bit (4mx8/2mx16) cmos mask rom data sheet
K4C561638C-TCDA
256mb network dram
K4C89093AF-ACFB000
288mb x18 network dram2 specification
K4H560438E-ZC
128mb ddr sdram
K4D553238F-JC40
256mbit gddr sdram
K4H281638A-TLB0
128mb ddr sdram
K4H281638A-TCA2
128mb ddr sdram
K4H560838E-NC/LA2
Ddr sdram 256mb e die (x4, x8)
K4H283238D-TLA2
128mb ddr sdram
KFG4G16D2M-DED6
Flash memory(54mhz)
KM681000
128k x8 bit low power cmos static ram
KM48S16030T-G/FL
4m x 8bit x 4 banks synchronous dram
M470L3324CU0-LB3
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb c die
KM681000BLRE-7L
128k x8 bit low power cmos static ram
KM68U1000BLG-10
128k x 8bit low power and low voltage cmos statinc ram
KM416V1004A-L8
1m x 16 bit cmos dynamic ram with extended data out
M368L1624DTM
184pin unbuffered module based on 256mb d die 64/72 bit non ecc/ecc
M366S3253DTU
32mx64 sdram dimm based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M366S0424FTS
4mx64 sdram dimm based on 4mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
M470T3354CZ3-CE7
Ddr2 unbuffered sodimm 200pin unbuffered sodimm based on 512mb c die 64bit non ecc