Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
KA2655D
Linear integrated circuit
KA2264
Fm stereo multiplex decoder
KA22241-S14-T
Dual equalizer amplifier with alc
K9F1208D0B-D
64m x 8 bit nand flash memory
K7J161882B-FC30000
512kx36 & 1mx18 ddr ii sio b2 sram
KA22291
Playback/record pre amplifier for doule deck
K9F6408U0C-B
8m x 8 bit bit nand flash memory
K6X4008C1F-Q
512kx8 bit low power full cmos static ram
K6X1008T2D-GQ85
128kx8 bit low power cmos static ram
K6X1008T2D-GB70
128kx8 bit low power cmos static ram
K6T1008C2E-RB70000
128kx8 bit low power cmos static ram
K6R4016C1D-UL10
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
KM718FV4021H-6
128kx36 & 256kx18 synchronous pipelined sram
KS0672
6 bit 384 channel tft lcd source driver
KS86P6104
Sam87ri family of 8 bit single chip cmos microcontrollers offer fast and efficient cpu, a wide range of integrated pe…
KSC1395
Npn epitaxial silicon transistor
M470L1624FU0-CA2
Ddr sdram sodimm
M366S0424ETS
4mx64 sdram dimm based on 4mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
M378T3253FG0-CCC
Ddr2 unbuffered sdram module
M374S6453CTU
64mx72 sdram dimm with ecc based on 32mx8, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M368L3223ETN-B0
Ddr sdram unbuffered module
KM44L32031BT-G(L)Y
Ddr sdram specification version 1.0
K4H280838D-TLA2
128mb ddr sdram
K4H280838C-TCA2
128mb ddr sdram
K4S641632F-TC55
64mbit sdram 1m x 16bit x 4 banks synchronous dram lvttl
K4H560838A-TLA2
128mb ddr sdram
K4H643238C-TCA2
128mb ddr sdram
K4H560838E-NCB0
Ddr sdram 256mb e die (x4, x8)
K4T51043QC-ZCLE6
512mb c die ddr2 sdram
K4H561638F-UC/LB3
256mb f die ddr sdram specification
K4D623238B-G(Q)C
512k x 32bit x 4 banks double data rate synchronous ram wi extended data out data sheet
STD8010
0.5 micron std80 standard cell library introduction
MC28U016NACA
Multimediacard specification
MC2DU064NACA
Multimediacard specification
M463S1654DT1
16mx64 sdram μsodimm based on 16mx16, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M390S2858DT1-C7C
128mx72 sdram dimm with pll & register based on stacked 128mx4, 4banks 8k ref., 3.3v sdrams with spd
KM416V1000C
1m x 16bit cmos dynamic ram with fast page mode
M372F0805DT0-C EDO MODE
8m x 72 dram dimm with ecc using 4mx16 & 4mx4, 4k refresh, 3.3v data sheet
KA2656
Linear integrated circuit
K6R1008V1B-C8
128kx8 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temper…
K6X4008C1F-GB70
512kx8 bit low power full cmos static ram
K6X0808C1D-RF55
32kx8 bit low power cmos static ram
K6T4008U1C-VF10
512kx8 bit low power and low voltage cmos static ram
K6R4008C1D-JC
1mx4 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges
K4S561633F-C
4m x 16bit x 4 banks mobile sdram in 54boc
K4S281632E-TL60
128mb e die sdram specification
K4S280432B-TC/L1H
128mbit sdram 8m x 4bit x 4 banks synchronous dram lvttl
K4H560438E-ZCA2
128mb ddr sdram
K4S641632H-L70
64mb h die sdram specification
K4H1G3238M-TCA2
128mb ddr sdram