Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
KM416V1000C
1m x 16bit cmos dynamic ram with fast page mode
K4H561638M-TCB0
128mb ddr sdram
K4H560438E-ZCA2
128mb ddr sdram
K4S280432B-TC/L1H
128mbit sdram 8m x 4bit x 4 banks synchronous dram lvttl
K4S641632H-L70
RAM
64mb h die sdram specification
K4S281632E-TL60
128mb e die sdram specification
K4S561633F-C
4m x 16bit x 4 banks mobile sdram in 54boc
K4S511633C-N
32mx16 mobile sdram 54csp 1/cs
K4H1G3238M-TCA2
128mb ddr sdram
K4S51323LF-MC
4m x 32bit x 4 banks mobile sdram in 90fbga
K7N803649B-QC25
256kx36 & 512kx18 bit pipelined ntramtm
K7N803645B-QC16/13
256kx36 & 512kx18 bit flow through ntram
KFG1G16U2M-DEB6
Flash memory(54mhz)
K6F2008V2E-YF70
256kx8 bit super low power and low voltage full cmos static ram
K6R1008C1A-C20
128kx8 high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperature ra…
K8D1716UT
16m dual bank nor flash memory
K9F5616U0C-H
512mb/256mb 1.8v nand flash errata
K9F1208D0B-Y
64m x 8 bit nand flash memory
K8D1716UBC-PI09
16m dual bank nor flash memory
K6X4008T1F-VQ70
512kx8 bit low power and low voltage cmos static ram
KA22135
Dual pre power amplifier and dc motor speed controller
K7A403600B
128kx36/x32 & 256kx18 synchronous sram
KA2225-3
Dual preamplifier for 3v using
K6R4016C1D-TP8
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K4H560838M-TLA0
128mb ddr sdram
K4D261638F-TC25
128mbit gddr sdram
K4H513238B-TCA2
128mb ddr sdram
K4E660812E
8m x 8bit cmos dynamic ram with extended data out
K4H510438M, K4H510838M
512mb ddr sdram data sheet
K4S281632E-TC60
128mb e die sdram specification
K4H1G0838A-TLB0
128mb ddr sdram
K4S511632D-KC/L1H
Ddp 512mbit sdram 8m x 16bit x 4 banks synchronous dram lvttl
M463S3254CK1
32mx64 sdram msodimm based on 32mx16, 4banks, 8k refresh, 3.3v synchronous drams with spd data sheet
M378T3354BGZ0-CD5/CC
Ddr2 unbuffered sdram module
KM68V1000BLE/LE-L
128k x 8bit low power and low voltage cmos statinc ram
KM6161002CL-20
Cmos sram
KFH1G16U2M-DIB5
Flash memory(54mhz)
M366S3323DTS-C1H
32mx64 sdram dimm based on 16mx8, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
M366S1623FTS
16mx64 sdram dimm based on 8mx8, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
KM416C1004C-L6
1m x 16bit cmos dynamic ram with extended data out
KM684000CLP-5L
512kx8 bit low power cmos static ram
KM62256CLGI-7L
32kx8 bit low power cmos static ram
K7N163645M K7N161845M
512kx36 & 1mx18 pipelined ntram™ data sheet
K9F2808U0C-DCB0
16m x 8 bit / 8m x 16 bit nand flash memory
K6R4004V1D-KC10
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K7A803609B
256kx36 & 512kx18 bit synchronous pipelined burst sram
KA2225-1
Dual preamplifier for 3v using
K7A403201B-QC
128kx36/x32 & 256kx18 synchronous sram
K6R4016C1D-KC8
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
MC1GU032HACA
Multimediacard specification