Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4H510438B-GC/LA2
512mb b die ddr sdram specification
K4S513233F-ML1LT00
Mobile sdram
CL10B224KP8NNNC
Multilayer ceramic capacitor
K4H640438A-TLA2
128mb ddr sdram
K4H561638D-TCC4
256mb d die ddr400 sdram specification
DS_K7M323625M
1mx36 & 2mx18 flow through ntram
K4H640438D-TLA2
128mb ddr sdram
K4S64323LH-HG75
512k x 32bit x 4 banks mobile sdram in 90fbga
K4M563233E-C
2m x 32bit x 4 banks mobile sdram in 90fbga
K4S641632H-TL60
64mb h die sdram specification
K4R271669F-TCS8000
128mbit rdram(f die)
K4F160812D
2m x 8bit cmos dynamic ram with fast page mode
K4H1G0838A-TLA0
128mb ddr sdram
K4S560432D-TL75
16m x 4bit x 4 banks synchronous dram lvttl
K4H280438D-TCA0
128mb ddr sdram
K4S51163PF-YF1L000
8m x 16bit x 4 banks mobile sdram
KA2268
Tv sound mpx for korea
K9F1208U0B-V
64m x 8 bit nand flash memory
KA3361B
Telephone
MC28U032HACA
Multimediacard specification
MR18R326GAG0-CT9
(32mx18) 16pcs rimm module based on 576mb a die, 32s banks,32k/32ms ref, 2.5v
KFH1216D2M-DED
Flash memory
KFH1G16U2M-DED5
Flash memory(54mhz)
KFH2G16U2M-DEB5
Flash memory(54mhz)
KS57C4204
Single chip cmos microcontroller
KM416C4104C
4m x 16bit cmos dynamic ram with extended data out
KM48L16031BT-GLZ/Y/0
128mb ddr sdram
KFG4G16D2M-DID5
Flash memory(54mhz)
M383L2920BTS-A2
Ddr sdram registered module
M312L5628BT0-A2
Ddr sdram registered module
KM416C4100C
4m x 16bit cmos dynamic ram with fast page mode
KM68V1000BLT-7
128k x 8bit low power and low voltage cmos statinc ram
KM416RD32C
128/144mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
K7R643684M
2mx36 & 4mx18 qdrtm ii b4 sram
K7A803600B-QC16
256kx36 & 512kx18 bit synchronous pipelined burst sram
KFG1216U2A-DIB5000
Flash memory
K6R1016C1D-JTCI10/12
64kx16 bit high speed cmos static ram(5.0v operating). data sheet
K8D1716UTB-TC07
16m dual bank nor flash memory
KA2197D
Rgb encoder for ntsc
K9F1216U0A-P
64m x 8 bit , 32m x 16 bit nand flash memory
K7B803625
256kx36 & 512kx18 bit synchronous pipelined burst sram
K6T1008C2E FAMILY
128kx8 bit low power cmos static ram
CM1819
8 2 p.c.b circuit diagram
K4D263238D-QC40
1m x 32bit x 4 banks double data rate synchronous dram with bi directional data strobe and dll
K4H560438D-TLA2
128mb ddr sdram
K4E660812C
8m x 8bit cmos dynamic ram with extended data out
K4H1G0438M-TC/LB3
1gb m die ddr sdram specification
K4H510438G
512mb b die ddr sdram specification
MMBC1622D6
Npn (amplifier transistor)
MR18R1624GEG0
Key timing parameters