Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.

Страна: Южная КореяОснована: 1969

Найдено 7 686 компонентов
Партномер
Категория
Описание
K9F1216U0A-P
64m x 8 bit , 32m x 16 bit nand flash memory
K8D1716UTB-TC07
16m dual bank nor flash memory
K6T1008C2E FAMILY
128kx8 bit low power cmos static ram
MMBC1622D6
Npn (amplifier transistor)
MR18R1624GEG0
Key timing parameters
KA7226
Dual equalizer amplifier with alc
K9K2G16Q0M-YCB0
256m x 8 bit / 128m x 16 bit nand flash memory
K7N803649A
256kx36bit pipelined ntram™ data sheet
K9K2G08U0M
256m x 8 bit / 128m x 16 bit nand flash memory
K6L0908C2A-TB70
64kx8 bit low power cmos static ram
K7R323682C-FCI25
1mx36 & 2mx18 & 4mx9 qdrtm ii b2 sram
K9F2808U0C-PIB0
16m x 8 bit nand flash memory
K6R4004C1C-I
1mx4 bit high speed static ram(5v operating).
KA22495D
Fm front end
KA2250-2
Dual electronic volume control
K6X0808T1D-GB85
32kx8 bit low power cmos static ram
K8D1716UTC-FI09
16m dual bank nor flash memory
K4H561638C-TLA0
128mb ddr sdram
K4H640438M-TCA2
128mb ddr sdram
K4H560438E-ZLB3
128mb ddr sdram
K4D64163HF-TC36
1m x 16bit x 4 banks double data rate synchronous dram
K4S511632C-L7C
Ddp 512mbit sdram
M470L3223DT0-CLA2
256mb ddr sdram module
M464S6554BTS-CL7A
Sdram unbuffered sodimm
M374S1623ET0
16mx72 sdram dimm with ecc based on 8mx8, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
KM416C1004C-45
1m x 16bit cmos dynamic ram with extended data out
KM416S4030CT-F8
1m x 16bit x 4 banks synchronous dram
KM62256CLGE-7
32kx8 bit low power cmos static ram
MC28U128HACA
Multimediacard specification
MC1GU256HACA-0QC00
Multimediacard specification
PC1004-390K-RC
Pc100 sdram module preliminary
STDM110 ASIC
Pll 2013x
K4T56043QF
256mb f die ddr2 sdram
K4T51043QI
512mb b die ddr2 sdram
K4J55323QF-GC
256mbit gddr3 sdram
K4H560438E-VCB0
128mb ddr sdram
K4M511633E-Y
8m x 16bit x 4 banks mobile sdram in 54fbga
K4S641633H-N
1m x 16bit x 4 banks mobile sdram in 54fbga
K4S640832D-TC/L1L
64mbit sdram 2m x 8bit x 4 banks synchronous dram lvttl
K4S560432E-TL75
256mb e die sdram specification
K4H1G3238A-TCA2
128mb ddr sdram
KFG1G16D2M-DIB
Flash memory
K6R1008C1B
128kx8 bit high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperatur…
K7M803625A
256kx36bit flow through ntram™ data sheet
K6R1008V1B-B-L
128kx8 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temper…
KA22066
4.0w dual audio power amp
K6R1008V1D-KI08/10
256kx4 bit (with oe) high speed cmos static ram(5.0v operating).
K6R4016C1D-KP10
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T1008C2E-F
128kx8 bit low power cmos static ram
K6T4008C1B FAMILY
512kx8 bit low power cmos static ram