Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.

Страна: Южная КореяОснована: 1969

Найдено 7 686 компонентов
Партномер
Категория
Описание
KFG1216U2M
Flash memory
K7N403601B-QC13
128kx36 & 256kx18 pipelined ntram
K9T1G08U0M-YIB0000
128m x 8 bits nand flash memory
K6R1008V1B
128kx8 bit high speed static ram(3.3v operating), revolutionary pin out. operated at commercial and industrial temper…
KC73125UCA
1/3 inch ccd image sensor for ntsc camera
K7N163631B-QC25000
512kx36 & 1mx18 pipelined ntram
K6X1008T2D-TF70T00
128kx8 bit low power cmos static ram
KA8301-L
Video
K9F1216D0A-P
64m x 8 bit , 32m x 16 bit nand flash memory
K6T1008C2E-GP70
128kx8 bit low power cmos static ram
K6T4008C1C-DL70
512kx8 bit low power cmos static ram
K4C89083AF-ACF5
288mb x18 network dram2 specification
K4S643233F-SE/N
2mx32 mobile sdram 90fbga cmos sdram
K4C89093AF-AIFB
288mb x18 network dram2 specification
K4H560438H-UC/LB0
128mb ddr sdram
K4M51163LE-YL
8m x 16bit x 4 banks mobile sdram in 54fbga
K4M64163PH-RBF90
1m x 16bit x 4 banks mobile sdram in 54csp
K4R441869B-NCK8
direct rdram™ data sheet
K4H511638M-TLB0
128mb ddr sdram
K4S161622D-TC80000
512k x 16bit x 2 banks synchronous dram
K4H511638E-TCA0
128mb ddr sdram
K4H281638M-TLA2
128mb ddr sdram
K4S510432M-TL75
32m x 4bit x 4 banks synchronous dram data sheet
PC1002
Pc100 sdram module preliminary
MC2DU512NACA-0QC00
Multimediacard specification
MC56U032HACA-0QC00
Multimediacard specification
K6E0808C1E-P
32k x 8 bit high speed cmos static ram
K6R1008C1B-
128kx8 bit high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperatur…
K6R4016C1D-UP8
256kx16 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges.
K6T4008C1C-GF70
512kx8 bit low power cmos static ram
M470T2953CZ0-D5
Ddr2 unbuffered sodimm
M470L6524BTU0-CA2
Ddr sdram unbuffered module 18 4 pin unbuffered module based on 512mb b die
KFH1G16Q2M-DED6
Flash memory(54mhz)
M347S6453CTS-C1H
M374s6453cts pc133/pc100 unbuffered sdram dimm
KFW1G16U2M-DIB6
Flash memory(54mhz)
KSC1222
Npn (low frequency low noise amplifier)
KIM684000-7
524, 288 word x 8 bit high speed cmos static ram
KM41256AZ-10
256k x 1 bit dynamic ram with page / nibble mode
KS57P21408
4 bit cmos single chip microcontroller
KM62256CLGI-7
32kx8 bit low power cmos static ram
K4H640838E-TLA0
128mb ddr sdram
K4H640838E-TLB0
128mb ddr sdram
K4D26323RA
1m x 32bit x 4 banks double data rate synchronous ram with bi directional data strobe and dll
K4S643232C-TC/L60
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl
K4S641633H-RBE
1m x 16bit x 4 banks mobile sdram in 54fbga
K4G323222A-PC/L7C
32mbit sgram
K4S563233F
2m x 32bit x 4 banks mobile sdram in 90fbga
K4S560832D-TC/L75
256mbit sdram 8m x 8bit x 4 banks synchronous dram lvttl
K4S281632C-TL1H
128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl
K4H280438B-TLA2
256mb ddr sdram